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SD1440-003L

4° (nominal) acceptance angle

Inventory:9,483

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Overview of SD1440-003L

The SD1440-003L is a dual N-channel enhancement-mode MOSFET transistor designed for high-power switching applications. It features a low on-resistance and high drain current capability, making it suitable for power management and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SD1440-003L MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Offers two N-channel MOSFETs in a single package for versatile switching applications.
  • Low On-Resistance: The SD1440-003L has low on-resistance, reducing power dissipation and improving efficiency.
  • High Drain Current Capability: Capable of handling high drain currents for power applications.
  • Enhancement-Mode Design: Enables easy control of the transistor by applying gate voltage.

Note: For detailed technical specifications, please refer to the SD1440-003L datasheet.

Application

  • Power Switching: Ideal for high-power switching applications due to its low on-resistance and high current handling capability.
  • Power Amplification: Suitable for use in power amplifiers for audio or RF signal amplification.
  • Power Management: Can be used in power management circuits for efficient power control.

Functionality

The SD1440-003L MOSFET is designed for high-power switching and amplification applications. It provides reliable performance in power management circuits and power amplifiers.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the controlling signal source.
  • Drain Connection: Connect the drain pin (D) to the load or power supply.
  • Source Connection: Connect the source pin (S) to the ground or common reference point.

Frequently Asked Questions

Q: Is the SD1440-003L suitable for high-frequency applications?
A: Yes, the SD1440-003L's design allows for use in high-frequency applications with proper circuit design.

Equivalent

For similar functionalities, consider these alternatives to the SD1440-003L:

  • SD1441-002L: A related MOSFET transistor offering similar performance with slight variations in specifications.
  • SD1442-001L: Another option for high-power switching applications, compatible with SD1440-003L footprint.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Phototransistors RoHS Details
Product Phototransistors Package / Case Metal Can
Mounting Style Through Hole Peak Wavelength 935 nm
Collector- Emitter Voltage VCEO Max 30 V Collector-Emitter Breakdown Voltage 30 V
Collector-Emitter Saturation Voltage 400 mV Dark Current 100 nA
Rise Time 15 us Fall Time 15 us
Pd - Power Dissipation 75 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C Brand Honeywell
Half Intensity Angle Degrees 24 deg Height 3.1 mm
Length 2.41 mm Light Current 3 mA
Product Type Phototransistors Factory Pack Quantity 100
Subcategory Optical Detectors and Sensors Type Photodetector Transistors
Wavelength 935 nm Width 2.41 mm

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SD1440-003L

4° (nominal) acceptance angle

Inventory:

9,483