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SCT2120AF

Enhance your driving experience with efficient audio processing. (71 chars)

Inventory:6,449

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Overview of SCT2120AF

The SCT2120AF is a high-voltage N-channel Power MOSFET designed for various power electronics applications. This MOSFET features a low on-resistance and high transconductance, making it suitable for high-power switching and amplification circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the MOSFET
  • Drain (D): Power supply connection
  • Body Diode (D): Internal diode for current flow


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SCT2120AF MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The SCT2120AF can handle high voltages, making it suitable for power applications.
  • Low On-Resistance: This MOSFET offers low on-resistance, reducing power losses and improving efficiency.
  • High Transconductance: With high transconductance, the SCT2120AF provides efficient amplification capabilities.
  • Fast Switching Speed: The MOSFET has a fast switching speed, enabling rapid switching in power circuits.
  • Temperature Stability: The SCT2120AF maintains stable performance over a wide temperature range.

Note: For detailed technical specifications, please refer to the SCT2120AF datasheet.

Application

  • Power Electronics: Ideal for use in power supply circuits, motor control, and power amplification.
  • Switching Circuits: Suitable for high-power switching applications requiring efficient MOSFET performance.
  • Amplification: The SCT2120AF can be used in audio amplifiers and other signal amplification circuits.

Functionality

The SCT2120AF is an N-channel Power MOSFET that offers high voltage handling, low on-resistance, and high transconductance. It serves as a reliable and efficient component in various power electronics and amplification applications.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate (G) pin to control the switching of the MOSFET.
  • Power Supply: Connect the load to the Drain (D) pin and the ground to the Source (S) pin.

Frequently Asked Questions

Q: Can the SCT2120AF be used in high-frequency applications?
A: Yes, the SCT2120AF features a fast switching speed, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the SCT2120AF:

  • IRF3205: A high-voltage N-channel Power MOSFET with comparable performance characteristics.
  • STP55NF06L: This MOSFET from STMicroelectronics offers similar voltage handling and switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology SiC
Mounting Style Through Hole Package / Case TO-220AB
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 29 A
Rds On - Drain-Source Resistance 120 mOhms Vgs - Gate-Source Voltage - 6 V, + 22 V
Vgs th - Gate-Source Threshold Voltage 1.6 V Qg - Gate Charge 61 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 165 W Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 19 ns Forward Transconductance - Min 2.7 S
Product Type MOSFET Rise Time 31 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 60 ns Typical Turn-On Delay Time 22 ns
Part # Aliases SCT2120AFC Unit Weight 0.068784 oz

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SCT2120AF

Enhance your driving experience with efficient audio processing. (71 chars)

Inventory:

6,449