S34ML04G104BHI010

The S34ML04G104BHI010 is a NAND Flash memory IC with a capacity of 4Gb (512MB) that offers high-speed data storage and retrieval capabilities. It is designed for use in various electronic devices and systems that require non-volatile memory for storing program code, configuration data, and other digital information.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• VCC: Power Supply Voltage
• GND: Ground Connection
• CLE: Command Latch Enable
• CE#: Chip Enable
• A0-A13: Address Inputs
• DQ0-DQ15: Data Inputs/Outputs
• RE#: Read Enable
• WE#: Write Enable
• R/B#: Ready/Busy Output
• WP#: Write Protect
• RST: Reset

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the S34ML04G104BHI010 IC for a visual representation.

Key Features

• High Capacity: Offers a storage capacity of 4Gb (512MB) for data-intensive applications.
• High Speed: Provides fast read and write operations for efficient data access.
• Reliable Storage: NAND Flash technology ensures reliable and secure data storage.
• Wide Operating Voltage: Compatible with a range of supply voltages for versatile application scenarios.
• Industrial Grade: Suitable for use in industrial applications with extended temperature ranges and high reliability requirements.

Note: For detailed technical specifications, please refer to the S34ML04G104BHI010 datasheet.

Application

• Embedded Systems: Ideal for use in embedded systems, IoT devices, and industrial equipment.
• Solid-State Drives: Suitable for SSDs requiring high-speed and reliable non-volatile memory.
• Data Storage: Used in data storage systems for storing critical information in electronic devices.

Functionality

The S34ML04G104BHI010 NAND Flash memory IC provides reliable and high-speed data storage capabilities, making it essential for various digital applications where non-volatile memory is required.

Usage Guide

• Power Supply: Connect VCC (Pin) to the power supply voltage and GND (Pin) to ground.
• Data Transfer: Use the address inputs (A0-A13) and data inputs/outputs (DQ0-DQ15) for data transfer operations.
• Control Signals: Utilize command and control pins (CLE, CE#, RE#, WE#, R/B#, WP#, RST) for executing read, write, and other memory operations.

Frequently Asked Questions

Q: What is the maximum operating frequency of the S34ML04G104BHI010?
A: The S34ML04G104BHI010 operates at frequencies typically found in NAND Flash memory devices. For specific frequency details, refer to the datasheet.

Q: Is the S34ML04G104BHI010 suitable for automotive applications?
A: Yes, the S34ML04G104BHI010 is designed for industrial applications and can be used in automotive systems that require reliable non-volatile memory storage.