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S2008LS3

8 Amp SCRs with sensitivity and standard modes, designed for 200V applications, compliant with RoHS regulations - product S2008LS3

Inventory:5,980

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Overview of S2008LS3

The S2008LS3 is a dual Schottky barrier diode designed for high-speed switching applications. This diode features low forward voltage drop and fast reverse recovery time, making it ideal for rectification and protection in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Cathode 1: Cathode terminal for diode 1
  • Anode 1: Anode terminal for diode 1
  • Cathode 2: Cathode terminal for diode 2
  • Anode 2: Anode terminal for diode 2
  • Case: Diode package connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the S2008LS3 diode for a visual representation.

Key Features

  • Dual Schottky Barrier Diode: Provides two fast-switching diodes in a single package for efficient rectification.
  • Low Forward Voltage Drop: The S2008LS3 offers a low forward voltage drop, reducing power losses in rectification applications.
  • Fast Reverse Recovery Time: With a fast reverse recovery time, this diode ensures minimal switching loss and high efficiency.
  • High Surge Current Capability: The diode can handle high surge currents, making it suitable for protection circuits.
  • Compact Package: Available in a small form factor package for space-constrained applications.

Note: For detailed technical specifications, please refer to the S2008LS3 datasheet.

Application

  • Rectification: Ideal for use in rectifier circuits for converting AC to DC with low voltage drop.
  • High-Speed Switching: Suitable for high-speed switching applications requiring fast recovery times.
  • Protection Circuits: Used in protection circuits to safeguard other components from voltage spikes and overloads.

Functionality

The S2008LS3 dual Schottky barrier diode is designed to provide efficient rectification and high-speed switching capabilities in electronic circuits. Its low forward voltage drop and fast recovery time make it a reliable component for various applications.

Usage Guide

  • Mounting: Ensure proper heat sinking for the diode to maintain optimal performance.
  • Polarity: Connect the cathode and anode terminals as per the circuit requirements, observing correct polarity.
  • Current Limiting: Implement current-limiting resistors or circuit protection to prevent excessive currents through the diode.

Frequently Asked Questions

Q: Is the S2008LS3 suitable for high-frequency applications?
A: Yes, the S2008LS3 diode is designed for high-speed switching applications and is suitable for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the S2008LS3:

  • SCH2080KEC: A dual Schottky diode with enhanced current handling capabilities and lower forward voltage drop.
  • SDB20100LT-1: This dual Schottky diode offers high surge current capability and fast recovery times for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

di/dt @ 110°C (A/μs) 100 IDRM@VDRM 25°C (mA) 0.05
Max Gate Trigger Current (IGTMAX) (mA) 0.5 On-State Current (Itrms) (A) 8
Non-Repetitive Surge Current (ITSM 60Hz) (A) 100 Gate Trigger Voltage MAX 0.8
tgt (μs) 5 Repetitive Peak Off-State Voltage (VDRM) (V) 200
VTM (V) 1.6 Replaced By Part Number S4008LS3
Turn-off Time (µs) 45

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S2008LS3

8 Amp SCRs with sensitivity and standard modes, designed for 200V applications, compliant with RoHS regulations - product S2008LS3

Inventory:

5,980