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RYC002N05T316

Product RYC002N05T316 is a N-channel MOSFET manufactured by ROHM, featuring a maximum current rating of 200 mA and a voltage rating of 50 V

Quantity Unit Price(USD) Ext. Price
3000 $0.037 $111.00
6000 $0.033 $198.00
10 $0.058 $0.58
100 $0.047 $4.70
300 $0.041 $12.30
9000 $0.032 $288.00

Inventory:9,638

*The price is for reference only.
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Overview of RYC002N05T316

The RYC002N05T316 is a MOSFET transistor designed for high-performance switching applications. It features a low on-resistance and high current capability, making it suitable for use in power electronics and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for control
  • D: Drain terminal for output
  • S: Source terminal for ground connection
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RYC002N05T316 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The RYC002N05T316 offers a low on-resistance for efficient power switching.
  • High Current Capability: Capable of handling high currents, making it ideal for power applications.
  • Fast Switching Speed: Provides fast switching times for improved performance in switching circuits.
  • High Voltage Tolerance: Withstands high voltage levels, ensuring reliability in demanding environments.
  • Temperature Protection: Includes thermal protection features to prevent overheating during operation.

Note: For detailed technical specifications, please refer to the RYC002N05T316 datasheet.

Application

  • Power Electronics: Suitable for power supply units, motor control systems, and voltage regulation circuits.
  • Switching Circuits: Used in various electronic switching applications for efficient power management.
  • Motor Control: Ideal for controlling the speed and direction of motors in robotics and automation.

Functionality

The RYC002N05T316 MOSFET transistor is designed for high-performance power switching, offering low on-resistance and high current capability. It provides reliable and efficient operation in various electronic applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) terminal for controlling the switching operation.
  • Drain Connection: Connect the load or output to the Drain (D) terminal of the MOSFET.
  • Grounding: Ensure proper grounding by connecting the Source (S) terminal to the ground (GND).

Frequently Asked Questions

Q: Is the RYC002N05T316 suitable for high-frequency switching applications?
A: Yes, the RYC002N05T316 has fast switching speeds and is suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the RYC002N05T316:

  • IRFZ44N: A MOSFET transistor with comparable performance characteristics and voltage ratings.
  • FQP30N06L: Another high-current MOSFET suitable for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 200 mA Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 300 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 350 mW Channel Mode Enhancement
Brand ROHM Semiconductor Configuration Single
Fall Time 43 ns Forward Transconductance - Min 200 mS
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 5 ns Part # Aliases RYC002N05
Unit Weight 0.000282 oz

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