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RW1A030APT2CR

MOSFET Transistor P-Channel, 12 Volts, 3 Amperes

Inventory:8,692

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Overview of RW1A030APT2CR

The RW1A030APT2CR is a dual N-channel power MOSFET with a high current handling capacity and low on-resistance. It is designed for use in power management applications where efficient power switching is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain (Pin 1)
  • D: Drain (Pin 4)
  • S: Source (Pin 2)
  • S: Source (Pin 3)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RW1A030APT2CR MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Features two N-channel MOSFETs in a single package, allowing for bi-directional power flow.
  • High Current Handling: Capable of handling high currents, making it suitable for power applications.
  • Low On-Resistance: Provides low resistance to minimize power losses and improve efficiency.
  • Fast Switching Speed: Offers fast switching characteristics for quick power transitions.
  • Wide Operating Voltage Range: Operates within a wide voltage range, enhancing its compatibility with different systems.

Note: For detailed technical specifications, please refer to the RW1A030APT2CR datasheet.

Application

  • Power Management: Ideal for power management applications such as DC-DC converters, motor control, and power supplies.
  • Voltage Regulation: Suitable for voltage regulation circuits where efficient power switching is necessary.
  • Battery Protection: Can be used in battery protection circuits to control the flow of power in portable devices.

Functionality

The RW1A030APT2CR is a dual N-channel power MOSFET that facilitates efficient power switching and current handling in various power management applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain and source pins to the load and power supply respectively.
  • Heat Dissipation: Ensure proper heat sinking or thermal management as per the power dissipation requirements.

Frequently Asked Questions

Q: Is the RW1A030APT2CR suitable for high-frequency applications?
A: Yes, the RW1A030APT2CR offers fast switching speeds, making it suitable for high-frequency power applications.

Equivalent

For similar functionalities, consider these alternatives to the RW1A030APT2CR:

  • IRF3205: This is a power MOSFET with similar current handling capabilities and voltage ratings.
  • NTD5867NL: Another dual N-channel MOSFET suitable for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-563T-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 30 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Qg - Gate Charge 22 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 700 mW Channel Mode Enhancement
Series RW1A030AP Brand ROHM Semiconductor
Configuration Single Fall Time 75 ns
Forward Transconductance - Min 3.8 S Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 8000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 240 ns Typical Turn-On Delay Time 10 ns
Part # Aliases RW1A030AP Unit Weight 0.000212 oz

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packageimg

RW1A030APT2CR

MOSFET Transistor P-Channel, 12 Volts, 3 Amperes

Inventory:

8,692