RUE002N02TL
Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, 3 PIN
Inventory:7,751
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Part Number : RUE002N02TL
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Package/Case : EMT3
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Brands : Rohm Semiconductor
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : RUE002N02TL DataSheet (PDF)
Technical Attributes
Features1) Fast switching speed.2) Low voltage drive (1.2V) makes this device ideal for portable equipment.3) Drive circuits can be simple.Applications Switching
Key Features
- 1) Fast switching speed.
- 2) Low voltage drive (1.2V) makes this device ideal for portable equipment.
- 3) Drive circuits can be simple.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Not Recommended | Ihs Manufacturer | ROHM CO LTD |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | Pin Count | 3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | ROHM Semiconductor |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (Abs) (ID) | 0.2 A | Drain Current-Max (ID) | 0.2 A |
| Drain-source On Resistance-Max | 1.4 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e1 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 0.15 W | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN SILVER COPPER |
| Terminal Form | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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