• packageimg
packageimg

RUE002N02TL

MOSFET Small Signal, N-Channel Switching MOSFET, 20 Volts, 0.2 Amps

Quantity Unit Price(USD) Ext. Price
9000 $0.029 $261.00
6000 $0.030 $180.00
3000 $0.034 $102.00
300 $0.038 $11.40
100 $0.044 $4.40
10 $0.056 $0.56

Inventory:7,751

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for RUE002N02TL using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of RUE002N02TL

RUE002N02TL is a N-Channel 20 V 200mA (Ta) 150mW (Ta) Surface Mount EMT3 optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The RUE002N02TL pinout refers to the configuration and function of each pin in its SOT-416F package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the RUE002N02TL has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-Channel MOSFET: The RUE002N02TL is a N-channel power MOSFET designed for high-frequency switching applications.
  • Low Voltage Operation: This device operates at low voltage levels, making it suitable for battery-powered or low-voltage systems.
  • High-Speed Switching: The RUE002N02TL is optimized for high-speed switching applications, providing fast turn-on and turn-off times.
  • Low Power Consumption: This device consumes minimal power during operation, making it suitable for battery-powered or low-power systems.
  • Surface Mount Package: The RUE002N02TL is available in a surface mount package (SOT-416F), allowing for easy integration into modern electronic devices.

Applications

  • Analog and Digital Signal Switching: The RUE002N02TL is suitable for analog and digital signal switching applications, such as audio amplifiers, motor control circuits, and power supplies.
  • Battery-Powered Systems: This device is ideal for battery-powered systems that require low voltage operation and high-speed switching.
  • Low-Voltage Power Supplies: The RUE002N02TL can be used in low-voltage power supply applications, such as DC-DC converters and power amplifiers.

Equivalents

For similar functionalities, consider these alternatives to the RUE002N02TL:

  • RUE001N01TL: A N-channel power MOSFET with similar specifications and performance characteristics.
  • RUE003P04TL: A P-channel power MOSFET with similar specifications and performance characteristics, but with a different pinout configuration.

Frequently Asked Questions

Q: What is the maximum operating voltage for the RUE002N02TL?
A: The maximum operating voltage is 20V.

Q: What is the maximum current rating for the RUE002N02TL?
A: The maximum current rating is 200mA (Ta).

Q: Is the RUE002N02TL suitable for high-frequency switching applications?
A: Yes, the RUE002N02TL is optimized for high-frequency switching applications and provides fast turn-on and turn-off times.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 0.2 A Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 1.4 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 JESD-609 Code e1
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN SILVER COPPER
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

DMP2008UFG-7

DMP2008UFG-7

The description of DMP2008UFG-7 highlights its characteristics as a P-channel PowerDI3333-8 MOSFET
IXXX200N65B4

IXXX200N65B4

The IXXX200N65B4 is a power transmission IGBT chip
SI1539CDL-T1-GE3

SI1539CDL-T1-GE3

30V MOSFET with 0.7A Current and 0.34W Power
CSD18563Q5AT

CSD18563Q5AT

Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
IXGH40N60B2D1

IXGH40N60B2D1

TO-247 N-Channel IGBT Chip Transistor 600V 75A 300W
PUMD2,115

PUMD2,115

Bipolar Transistors - Pre-Biased PUMD2/SOT363/SC-88