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RU1C002UNTCL

Transistor with MOSFET technology for N-channel operation

Quantity Unit Price(USD) Ext. Price
10 $0.043 $0.43
100 $0.039 $3.90
300 $0.036 $10.80
3000 $0.032 $96.00
6000 $0.030 $180.00
9000 $0.029 $261.00

Inventory:6,709

*The price is for reference only.
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Overview of RU1C002UNTCL

RU1C002UNTCL is a small signal field-effect transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The RU1C002UNTCL pinout refers to the configuration and function of each pin in its SOT-323-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the RU1C002UNTCL has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • High-Speed Operation: The RU1C002UNTCL is designed for high-speed applications, making it suitable for use in modern electronic devices that require fast switching times.
  • Low-Voltage Operation: This transistor operates at low voltages, making it ideal for use in battery-powered or low-voltage systems.
  • N-Channel MOSFET: The RU1C002UNTCL is an N-channel MOSFET, which provides excellent performance and reliability in a wide range of applications.
  • Small Package Size: The SOT-323-3 package is small and compact, making it ideal for use in space-constrained electronic devices.
  • High Current Handling: The RU1C002UNTCL can handle high currents, making it suitable for use in applications that require a lot of power.

Applications

  • Industrial Control Systems: The RU1C002UNTCL is suitable for use in industrial control systems that require fast switching times and low-voltage operation.
  • Automotive Electronics: This transistor can be used in automotive electronics applications, such as anti-lock braking systems (ABS) and traction control systems (TCS).
  • Medical Devices: The RU1C002UNTCL is suitable for use in medical devices that require high-speed and low-voltage operation, such as defibrillators and pacemakers.
  • Home Automation: This transistor can be used in home automation systems that require fast switching times and low-voltage operation, such as smart lighting and security systems.
  • Consumer Electronics: The RU1C002UNTCL is suitable for use in consumer electronics applications, such as smartphones, tablets, and laptops.

Equivalents

  • RU1C001UNTCL: The RU1C001UNTCL is a similar transistor that provides high-speed and low-voltage operation, but with slightly different specifications.
  • RU1C003UNTCL: The RU1C003UNTCL is another similar transistor that provides high-speed and low-voltage operation, but with even more advanced features.

Frequently Asked Questions

Q: What is the maximum current handling of the RU1C002UNTCL?
A: The maximum current handling of the RU1C002UNTCL is 500mA.

Q: Can the RU1C002UNTCL be used in high-temperature applications?
A: Yes, the RU1C002UNTCL can be used in high-temperature applications up to 150°C.

Q: Is the RU1C002UNTCL suitable for use in automotive applications?
A: Yes, the RU1C002UNTCL is suitable for use in automotive applications due to its high-speed and low-voltage operation.

Q: Can the RU1C002UNTCL be used in medical devices?
A: Yes, the RU1C002UNTCL can be used in medical devices that require high-speed and low-voltage operation, such as defibrillators and pacemakers.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 200mA, 2.5V Vgs(th) (Max) @ Id 1V @ 1mA
Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V
Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package UMT3F
Package / Case SC-85 Base Product Number RU1C002

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RU1C002UNTCL

Transistor with MOSFET technology for N-channel operation

Inventory:

6,709