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RU1C001UNTCL

Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits

Quantity Unit Price(USD) Ext. Price
21000 $0.011 $231.00
9000 $0.011 $99.00
3000 $0.013 $39.00
600 $0.014 $8.40
200 $0.017 $3.40
20 $0.021 $0.42

Inventory:5,610

*The price is for reference only.
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Overview of RU1C001UNTCL

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 100 mA Rds On - Drain-Source Resistance 2.5 Ohms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 300 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 150 mW Channel Mode Enhancement
Series RU1C001UN Brand ROHM Semiconductor
Configuration Single Fall Time 38 ns
Forward Transconductance - Min 180 mS Product Type MOSFET
Rise Time 4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 5 ns
Part # Aliases RU1C001UN Unit Weight 0.000212 oz

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RU1C001UNTCL

Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits

Inventory:

5,610