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RTR030P02HZGTL

MOSFET for Automotive Applications: -20V Pch Small Signal, 3A

Quantity Unit Price(USD) Ext. Price
1000 $0.119 $119.00
500 $0.121 $60.50
200 $0.126 $25.20
1 $0.325 $0.32

Inventory:8,266

*The price is for reference only.
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Overview of RTR030P02HZGTL

The RTR030P02HZGTL is a P-channel MOSFET designed for high-speed switching applications. This MOSFET features a low on-resistance and a small form factor, making it ideal for space-constrained electronic designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RTR030P02HZGTL MOSFET for a visual representation.

Key Features

  • High-Speed Switching: Designed for rapid switching applications, suitable for high-frequency circuits.
  • Low On-Resistance: Offers low conduction losses and minimal heat generation during operation.
  • Small Form Factor: Compact design allows for integration into space-constrained electronic systems.
  • Low Gate Drive Voltage: Can be easily driven by low-voltage control signals, enabling efficient control in low-power applications.
  • Enhanced Thermal Performance: Provides effective heat dissipation for improved reliability under high-power operation.

Note: For detailed technical specifications, please refer to the RTR030P02HZGTL datasheet.

Application

  • Power Management: Suitable for power switching and control in various electronic systems.
  • DC-DC Converters: Ideal for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Can be employed in motor control applications for reliable and efficient operation.

Functionality

The RTR030P02HZGTL is a P-channel MOSFET designed for high-speed switching with low on-resistance, making it an ideal choice for applications requiring efficient power management and high-frequency operation.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching the MOSFET.
  • Drain and Source Connections: Complete the circuit by connecting the drain (D) and source (S) pins appropriately based on the application requirements.

Frequently Asked Questions

Q: Is the RTR030P02HZGTL suitable for use in battery-powered devices?
A: Yes, the low on-resistance and efficient switching characteristics make the RTR030P02HZGTL well-suited for battery-powered applications requiring high-speed switching.

Equivalent

For similar functionalities, consider these alternatives to the RTR030P02HZGTL:

  • RTR010P02HZGTL: This P-channel MOSFET offers similar high-speed switching capabilities, with slight variations in on-resistance and package options.
  • RTR040P02HZGTL: Another P-channel MOSFET with comparable performance characteristics, suitable for high-speed switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SC-96-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 75 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 9.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1 W
Channel Mode Enhancement Qualification AEC-Q101
Brand ROHM Semiconductor Configuration Single
Fall Time 20 ns Forward Transconductance - Min 2.5 S
Product Type MOSFET Rise Time 20 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 50 ns
Typical Turn-On Delay Time 12 ns Part # Aliases RTR030P02HZG

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RTR030P02HZGTL

MOSFET for Automotive Applications: -20V Pch Small Signal, 3A

Inventory:

8,266