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RTF010P02TL

Small Signal Field-Effect Transistor, 1A I(D), 20V

Quantity Unit Price(USD) Ext. Price
1000 $0.088 $88.00
500 $0.089 $44.50
200 $0.092 $18.40
1 $0.231 $0.23

Inventory:8,499

*The price is for reference only.
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Overview of RTF010P02TL

The RTF010P02TL is a P-channel MOSFET transistor designed for use in power management applications. It features a low on-state resistance and high current capability, making it suitable for various power control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RTF010P02TL MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The RTF010P02TL offers a low RDS(ON) for efficient power handling.
  • High Current Capability: With its high current rating, this MOSFET can handle substantial power loads.
  • Fast Switching Speed: The RTF010P02TL provides quick switching times for responsive power control.
  • Enhanced Power Efficiency: By minimizing conduction losses, this MOSFET improves power efficiency in circuits.
  • Temperature Stability: Designed to operate reliably over a wide temperature range, ensuring stable performance.

Note: For detailed technical specifications, please refer to the RTF010P02TL datasheet.

Application

  • Power Management: Ideal for power switching, voltage regulation, and other power management functions in electronic devices.
  • Motor Control: Suitable for motor drive circuits and PWM applications requiring efficient power control.
  • Battery Protection: Used in battery protection circuits to prevent overcurrent or short-circuit conditions.

Functionality

The RTF010P02TL P-channel MOSFET transistor is designed to control power flow in circuits with low resistance, high current capacity, and fast switching characteristics, making it reliable for power management tasks.

Usage Guide

  • Gate Control: Apply the appropriate voltage level to the gate (G) to switch the MOSFET between on and off states.
  • Load Connection: Connect the load between the drain (D) and source (S) pins of the RTF010P02TL.
  • Heat Dissipation: Ensure adequate heat sinking or thermal management for prolonged reliability under load.

Frequently Asked Questions

Q: Is the RTF010P02TL suitable for high-frequency applications?
A: While the RTF010P02TL offers fast switching speeds, consider the specific application requirements for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the RTF010P02TL:

  • IRF4905: A P-channel power MOSFET with comparable characteristics to the RTF010P02TL for power management applications.
  • FQP27P06: This P-channel MOSFET provides similar performance and characteristics for power control circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323T-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1 A Rds On - Drain-Source Resistance 280 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 800 mW
Channel Mode Enhancement Series RTF010P02
Brand ROHM Semiconductor Configuration Single
Fall Time 8 ns Height 0.77 mm
Length 2 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Type MOSFET
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 9 ns
Width 1.7 mm Part # Aliases RTF010P02

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RTF010P02TL

Small Signal Field-Effect Transistor, 1A I(D), 20V

Inventory:

8,499