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RSQ030P03TR

Single-element P-channel metal-oxide semiconductor field-effect transistor

Quantity Unit Price(USD) Ext. Price
1 $0.607 $0.61
200 $0.242 $48.40
500 $0.235 $117.50
1000 $0.230 $230.00

Inventory:9,901

*The price is for reference only.
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Overview of RSQ030P03TR

The RSQ030P03TR is a 30V P-Channel Enhancement Mode MOSFET designed for power management applications.This MOSFET features a low on-resistance and high current capability,making it suitable for use in various switch-mode power supply and battery protection circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RSQ030P03TR MOSFET for a visual representation.

Key Features

  • Enhancement Mode MOSFET:The RSQ030P03TR is an enhancement mode MOSFET that allows for easy control of the power flow in circuits.
  • Low On-Resistance:With its low on-resistance,this MOSFET minimizes power loss and heat generation in power management applications.
  • High Current Capability:This MOSFET can handle high continuous currents,making it suitable for power switching applications.
  • 30V Maximum Voltage Rating:The RSQ030P03TR has a maximum voltage rating of 30V,allowing for use in a wide range of voltage applications.
  • Compact Package:Available in a compact and space-saving package for easy integration into circuit designs.

Note:For detailed technical specifications,please refer to the RSQ030P03TR datasheet.

Application

  • Power Management Systems: Ideal for power management systems requiring efficient switching and control.
  • Battery Protection: Suitable for use in battery protection circuits to prevent overcurrent and overvoltage conditions.
  • Switch-Mode Power Supplies: Used in switch-mode power supply designs for efficient power conversion.

Functionality

The RSQ030P03TR is a P-Channel MOSFET that offers reliable and efficient power management capabilities.Its low on-resistance and high current handling make it a versatile component for various power-related applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage level to the Gate pin to control the power flow between the Drain and Source pins.
  • Connection: Connect the Drain pin to the load, and the Source pin to the ground or system reference point.

Frequently Asked Questions

Q: Is the RSQ030P03TR suitable for high-frequency switching applications?
A: Yes, the RSQ030P03TR's design makes it suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the RSQ030P03TR:

  • RSLH0106SC:A P-Channel MOSFET with similar performance characteristics suitable for power management applications.
  • RSQ060P02TR:Another P-Channel Enhancement Mode MOSFET from the same manufacturer, offering a different voltage and current rating.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-457T-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Series RSQ030P03
Brand ROHM Semiconductor Configuration Single
Fall Time 13 ns Height 0.85 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Type MOSFET
Typical Turn-Off Delay Time 40 ns Typical Turn-On Delay Time 10 ns
Width 1.6 mm Part # Aliases RSQ030P03

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