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RSD200N05TL

Type: Power MOSFET with N-channel drive

Inventory:5,716

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Overview of RSD200N05TL

The RSD200N05TL is an N-channel power MOSFET designed for high-efficiency and high-reliability power management applications. It features a low on-resistance and robust performance, making it suitable for a wide range of power electronics designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • V: Source
  • S: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RSD200N05TL MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The RSD200N05TL features a low on-resistance, minimizing power losses and improving efficiency in power management applications.
  • High Current Handling: With its high current handling capability, this MOSFET is suitable for power switching and regulation in various electronic systems.
  • Enhanced Thermal Performance: The MOSFET is designed for enhanced thermal dissipation, ensuring reliable operation even under high power conditions.
  • Robust Construction: The RSD200N05TL is built to withstand high voltage and current stress, providing long-term reliability in power circuits.

Note: For detailed technical specifications, please refer to the RSD200N05TL datasheet.

Application

  • Power Supplies: Ideal for use in power supply units, voltage regulators, and DC-DC converters.
  • Motor Control: Suitable for motor drive and control applications requiring high-current switching.
  • Inverter Systems: Used in inverter designs for renewable energy systems and motor drives.

Functionality

The RSD200N05TL N-channel MOSFET provides efficient power switching and regulation capabilities, making it an essential component in various power electronics applications.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate pin (G) to control the switching behavior of the MOSFET.
  • Source and Drain Connections: Connect the voltage source to the source pin (V) and the load to the drain pin (S) appropriately.
  • Heat Dissipation: Ensure adequate thermal management to maintain the MOSFET within its safe operating temperature range.

Frequently Asked Questions

Q: Is the RSD200N05TL suitable for automotive applications?
A: Yes, the RSD200N05TL is designed to meet the requirements for automotive power systems and can be used in automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the RSD200N05TL:

  • IRF520N: N-channel MOSFET with similar voltage and current ratings, suitable for power management applications.
  • FQP30N06L: This MOSFET provides comparable performance and characteristics to the RSD200N05TL, making it an alternative for power electronics designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 45 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 20 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Series RSD200N05
Brand ROHM Semiconductor Configuration Single
Fall Time 20 ns Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 10 ns
Part # Aliases RSD200N05 Unit Weight 0.011640 oz

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packageimg

RSD200N05TL

Type: Power MOSFET with N-channel drive

Inventory:

5,716