RQ5A030APTL
TSMT3-packaged P-MOSFET transistor engineered for unipolar -12V operation and -3A current flow
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.240 | $0.24 |
200 | $0.096 | $19.20 |
500 | $0.093 | $46.50 |
1000 | $0.091 | $91.00 |
Inventory:7,489
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Part Number : RQ5A030APTL
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Package/Case : SOT23-3
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Manufacturer : Rohm Semiconductor
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Components Classification : Single FETs, MOSFETs
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Datesheet : RQ5A030APTL DataSheet (PDF)
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Series : RQ5A030
The RQ5A030APTL is a low-dropout voltage regulator (LDO) IC designed to provide a stable and regulated output voltage with low dropout voltage. It is designed to be used in various electronic circuits and power management applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the RQ5A030APTL IC for a visual representation. Note: For detailed technical specifications, please refer to the RQ5A030APTL datasheet. Functionality The RQ5A030APTL is a low-dropout voltage regulator designed to provide a stable and regulated output voltage, making it essential for maintaining consistent power supply in electronic circuits and systems. Usage Guide Q: What is the dropout voltage of the RQ5A030APTL? Q: Is the RQ5A030APTL suitable for automotive applications? For similar functionalities, consider these alternatives to the RQ5A030APTL:Overview of RQ5A030APTL
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The RQ5A030APTL has a low dropout voltage, typically in the range of 200mV to 300mV, ensuring stable output even with small input-output differentials.
A: Yes, the RQ5A030APTL is designed to meet automotive standards and can be used in automotive electronics for voltage regulation and power management.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-346-3 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 12 V | Id - Continuous Drain Current | 3 A |
Rds On - Drain-Source Resistance | 180 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage | 300 mV | Qg - Gate Charge | 16 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Configuration | Single |
Fall Time | 60 ns | Forward Transconductance - Min | 3.5 S |
Height | 0.95 mm | Length | 3 mm |
Product | MOSFETs | Product Type | MOSFET |
Rise Time | 40 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | Power MOSFET | Typical Turn-Off Delay Time | 160 ns |
Typical Turn-On Delay Time | 11 ns | Width | 1.8 mm |
Part # Aliases | RQ5A030AP | Unit Weight | 0.000423 oz |
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