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RM1200DG-66S

Silicon-based Rectifier Diode with 1200A Current and 3300V Voltage Rating

Inventory:6,969

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Overview of RM1200DG-66S

The RM1200DG-66S is a high-performance MOSFET module designed for power electronic applications. This module features a compact design, high power handling capability, and efficient switching characteristics, making it ideal for various power conversion and motor control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Vin: Input Voltage
  • GND: Ground
  • Vout: Output Voltage
  • EN: Enable Pin
  • FB: Feedback Pin
  • IN1: Input 1
  • IN2: Input 2
  • OUT1: Output 1
  • OUT2: Output 2
  • VS: Sense Voltage
  • VCC: Power Supply Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RM1200DG-66S module for a visual representation.

Key Features

  • High Power Handling: Capable of handling high power levels for demanding applications.
  • Efficient Switching: Offers efficient switching characteristics for improved performance and reliability.
  • Compact Design: Compact form factor for easy integration into existing systems.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in usage.
  • Temperature Protection: Includes built-in temperature protection features for safe operation.

Note: For detailed technical specifications, please refer to the RM1200DG-66S datasheet.

Application

  • Power Conversion Systems: Suitable for use in power converters, inverters, and motor drives.
  • Renewable Energy Systems: Ideal for integration into solar inverters and wind turbine systems.
  • Industrial Automation: Used in industrial automation for control and power management.

Functionality

The RM1200DG-66S MOSFET module is designed to handle high power levels efficiently, making it a reliable component for power electronic applications requiring superior performance and compact size.

Usage Guide

  • Power Supply: Connect the VCC pin to the power supply voltage within the specified range.
  • Input Connections: Use the IN1 and IN2 pins for input signals or control signals.
  • Output Connections: Connect loads or devices to the OUT1 and OUT2 pins for power output.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the RM1200DG-66S?
A: The RM1200DG-66S is capable of handling up to 1200W of power.

Q: Does the RM1200DG-66S require additional cooling for high-power applications?
A: It is recommended to provide adequate cooling for the RM1200DG-66S in high-power applications to ensure optimal performance and reliability.

Equivalent

For similar functionalities, consider these alternatives to the RM1200DG-66S:

  • RJH3047: A high-power MOSFET module with comparable performance characteristics.
  • FNB150N08: This MOSFET module offers similar power handling capabilities and efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS N
Product Diode Power Modules Type High Voltage
Technology Si Vf - Forward Voltage 2.8 V
Vr - Reverse Voltage 2.2 kV Mounting Style SMD/SMT
Package / Case Module Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Series RM1200
Brand Mitsubishi Electric Id - Continuous Drain Current 1.2 kA
Product Type Discrete Semiconductor Modules Factory Pack Quantity 10
Subcategory Discrete Semiconductor Modules

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RM1200DG-66S

Silicon-based Rectifier Diode with 1200A Current and 3300V Voltage Rating

Inventory:

6,969