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RFP4N100

N-Channel Power MOSFET TO-220AB

Inventory:7,834

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Overview of RFP4N100

The RFP4N100 is a power MOSFET transistor designed for high-voltage, high-speed power switching applications. It features a low on-state resistance and robust performance, making it suitable for power supply, motor control, and power management applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • G: Gate
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RFP4N100 for a visual representation.

Key Features

  • High-Voltage Capability: The RFP4N100 can withstand high voltage levels, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET transistor offers low on-state resistance, leading to minimal power dissipation and efficient switching.
  • High-Speed Switching: With its high-speed performance, the RFP4N100 is capable of fast switching operations, ideal for power management applications.
  • Robust Construction: Designed for rugged environments, this transistor delivers reliable and durable performance in demanding conditions.

Note: For detailed technical specifications, please refer to the RFP4N100 datasheet.

Application

  • Power Supply Systems: Suitable for use in power supply units and converters requiring high-voltage switching.
  • Motor Control: Can be utilized in motor control circuits for efficient power management and speed control.
  • Power Management: Ideal for applications involving power distribution, regulation, and switching.

Functionality

The RFP4N100 is a power MOSFET transistor designed for high-voltage, high-speed power switching applications. It provides efficient power management and robust performance in various power electronics applications.

Usage Guide

  • Power Connection: Connect the drain (D) and source (S) pins to the power supply and load respectively.
  • Gate Control: Apply the appropriate gate (G) voltage to control the switching behavior of the transistor.

Frequently Asked Questions

Q: Is the RFP4N100 suitable for automotive power applications?
A: Yes, the RFP4N100's robust construction and high-voltage capability make it suitable for automotive power management and control.

Equivalent

For similar functionalities, consider these alternatives to the RFP4N100:

  • IRF540N: A power MOSFET transistor with similar voltage and current ratings, suitable for high-power switching applications.
  • FQP30N06L: This MOSFET transistor offers comparable performance and characteristics to the RFP4N100, providing high-speed switching and low on-resistance.
  • STP16NF06FP: An alternative power MOSFET transistor designed for high-voltage switching applications, offering similar high-speed performance and robustness.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1 kV
Id - Continuous Drain Current 4.3 A Rds On - Drain-Source Resistance 3.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 150 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 50 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 50 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 170 ns Typical Turn-On Delay Time 30 ns
Width 4.7 mm Unit Weight 0.068784 oz

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RFP4N100

N-Channel Power MOSFET TO-220AB

Inventory:

7,834