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RFD8P05

Power P-Ch MOSFET TO-251AA

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Overview of RFD8P05

The RFD8P05 is a Power MOSFET designed for use in high-current, high-speed switching applications. It features a low on-state resistance and high-speed switching capability, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Input for controlling the switching operation
  • Drain: Power output connection
  • Source: Power input connection and reference for the internal circuit
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RFD8P05 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The RFD8P05 offers high-speed switching characteristics suitable for fast-switching applications.
  • Low On-State Resistance: With a low RDS(ON), the MOSFET minimizes power loss and heat generation during operation.
  • High Current Handling: Capable of handling high continuous and pulsed currents, making it suitable for power applications.
  • Low Gate Charge: The MOSFET features low gate charge, enabling efficient and rapid control of the switching operation.
  • Enhanced Efficiency: By minimizing conduction losses, the RFD8P05 provides enhanced power efficiency in various applications.

Note: For detailed technical specifications, please refer to the RFD8P05 datasheet.

Application

  • Power Management: Ideal for power switching and control in DC-DC converters and power supplies.
  • Motor Control: Suitable for motor drive and control circuits requiring high-speed switching and low on-state resistance.
  • Inverter Systems: Used in inverter systems for efficient power conversion and control.

Functionality

The RFD8P05 is a Power MOSFET designed to efficiently switch high currents and provide low on-state resistance for power management and motor control applications.

Usage Guide

  • Power Connections: Connect the drain and source pins to the power supply and load, respectively.
  • Gate Control: Apply appropriate voltage levels to the gate pin to control the switching operation.
  • Heat Management: Ensure proper heat sinking and thermal management for high-current applications to prevent overheating.

Frequently Asked Questions

Q: Can the RFD8P05 be used in automotive applications?
A: Yes, the RFD8P05 is suitable for automotive power management and motor control applications due to its high-speed switching and high current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the RFD8P05:

  • IRF540N: A power MOSFET with comparable high-speed switching and low on-state resistance characteristics suitable for power applications.
  • FQP30N06L: This MOSFET offers similar high current handling and low on-state resistance for power management and motor control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style Through Hole
Package / Case TO-251-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 300 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 48 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 20 ns
Height 6.3 mm Length 6.8 mm
Product Type MOSFET Rise Time 30 ns
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 42 ns Typical Turn-On Delay Time 16 ns
Width 2.5 mm Unit Weight 0.011993 oz

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