• RFD14N05 Package
RFD14N05 Package

RFD14N05

In Stock:8,565

RFD14N05 is a high-quality Single FETs, MOSFETs from Onsemi with a operating temperature range of - 55 C ~ + 175 C

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-251-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 48 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 17 ns
Height 6.3 mm Length 6.8 mm
Product Type MOSFET Rise Time 26 ns
Factory Pack Quantity 75 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 14 ns
Width 2.5 mm Part # Aliases RFD14N05_NL
Unit Weight 0.011993 oz

Overview of RFD14N05

RFD14N05 is a Trans MOSFET N-CH Si optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, e.g., analog and digital signal switching.

Pinout

The RFD14N05 pinout refers to the configuration and function of each pin in its TO252 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the RFD14N05 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Trans MOSFET N-CH Si: This feature highlights the type of semiconductor material used in the RFD14N05.
  • 50V 14A: These specifications indicate the maximum voltage and current ratings of the device.
  • 3-Pin (3+Tab) IPAK Rail: This feature describes the package type and pin configuration of the RFD14N05.

Applications

  • Analog and Digital Signal Switching: The RFD14N05 can be used in applications where high-speed switching is required, such as in analog-to-digital converters or digital signal processors.

Advantages and Disadvantages

Advantages

  • High-Speed Switching Capability: The RFD14N05 can handle high-speed switching applications with its fast switching times and low input capacitance.

Disadvantages

  • Sensitivity to Overvoltage: The device may be damaged or destroyed if it is subjected to overvoltages exceeding the maximum rated voltage of 50V.

Equivalents

For similar functionalities, consider these alternatives to the RFD14N05:

  • Other Trans MOSFET N-CH Si devices from onsemi or other manufacturers: These devices may offer similar performance characteristics and applications as the RFD14N05.

Frequently Asked Questions

Q: What is the maximum voltage rating of the RFD14N05?
A: The maximum voltage rating of the RFD14N05 is 50V.

Q: Can I use the RFD14N05 in high-speed switching applications?
A: Yes, the RFD14N05 can handle high-speed switching applications with its fast switching times and low input capacitance.

Q: Is the RFD14N05 sensitive to overvoltage?
A: Yes, the device may be damaged or destroyed if it is subjected to overvoltages exceeding the maximum rated voltage of 50V.

Q: Are there any specific design considerations for using the RFD14N05 in a circuit?
A: Yes, designers should refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics, as well as ensure correct connections for optimal device performance.

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Warranty, Returns, and Additional Information

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RFD14N05 Package

RFD14N05

N-channel power MOSFET TO-251AA

Inventory:

8,565