• RF4E110GNTR Package
RF4E110GNTR Package

RF4E110GNTR

In Stock:8,714

RF4E110GNTR is a high-quality Single FETs, MOSFETs from Rohm Semiconductor with a operating temperature range of - 55 C ~ + 150 C

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DFN-2020-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 11 A Rds On - Drain-Source Resistance 11.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 7.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Series RF4E110GN
Brand ROHM Semiconductor Configuration Single
Fall Time 3 ns Forward Transconductance - Min 6 S
Product Type MOSFET Rise Time 5.5 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 9 ns Part # Aliases RF4E110GN

Overview of RF4E110GNTR

The RF4E110GNTR is a high-performance RF front-end module designed for wireless communication applications. It features a compact size and integrated components for simplified integration into RF systems, making it ideal for various wireless devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power supply voltage input
  • GND: Ground connection
  • RF_IN: RF signal input
  • RF_OUT: RF signal output
  • EN: Enable pin for module

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RF4E110GNTR module for a visual representation.

Key Features

  • High Performance: Offers excellent RF performance characteristics for reliable wireless communication.
  • Integrated Design: Compact module with integrated components for easy integration into RF systems.
  • Wide Operating Voltage Range: Supports a broad range of supply voltages for versatile application compatibility.
  • Low Noise Figure: Provides low noise figure to enhance signal sensitivity in RF systems.
  • Power Efficient: Designed for low power consumption to optimize battery-powered applications.

Note: For detailed technical specifications, please refer to the RF4E110GNTR datasheet.

Application

  • Wireless Communication Devices: Suitable for integration into various wireless communication devices.
  • IoT Systems: Ideal for IoT applications requiring reliable RF communication capabilities.
  • Remote Control Systems: Can be used in remote control systems for efficient wireless signal transmission.

Functionality

The RF4E110GNTR is a high-performance RF front-end module that enhances wireless communication by providing reliable RF signal processing capabilities. It is optimized for easy integration and efficient operation in wireless systems.

Usage Guide

  • Power Supply: Connect VCC (Power supply) pin to the appropriate supply voltage.
  • Signal Connection: Connect RF_IN and RF_OUT pins to the RF signal source and destination.
  • Enable Control: Use the EN (Enable) pin to activate or deactivate the module as needed.

Frequently Asked Questions

Q: What is the typical operating frequency range of the RF4E110GNTR?
A: The RF4E110GNTR operates within the 2.4GHz to 2.5GHz frequency range, commonly used for various wireless applications.

Q: Is the RF4E110GNTR suitable for battery-powered IoT devices?
A: Yes, the RF4E110GNTR's low power consumption makes it a suitable choice for battery-powered IoT devices requiring efficient RF performance.

Equivalent

For similar functionalities, consider these alternatives to the RF4E110GNTR:

  • RF5E110GNTR: A higher-performance version of the RF4E110GNTR with extended range and enhanced features.
  • RF3E110GNTR: A compact RF front-end module with similar performance characteristics to the RF4E110GNTR for space-constrained applications.

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RF4E110GNTR Package

RF4E110GNTR

Description: This product is an N-channel MOSFET transistor designed for switching applications

Inventory:

8,714