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RF101L2STE25

Procure RF101L2STE25 swiftly, ensuring compliance with RoHS regulations and dispatching within 24 hours

Quantity Unit Price(USD) Ext. Price
5 $0.115 $0.58
50 $0.093 $4.65
150 $0.082 $12.30
1500 $0.068 $102.00
3000 $0.062 $186.00
4500 $0.058 $261.00

Inventory:5,916

*The price is for reference only.
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Overview of RF101L2STE25

The RF101L2STE25 is a high-frequency RF transistor designed for use in RF amplifier and oscillator circuits. It features high power gain and efficiency, making it suitable for radio frequency applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GND: Ground connection
  • VCC: Power supply voltage
  • RFIN: RF input signal
  • RFOUT: RF output signal
  • Bias: Biasing pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RF101L2STE25 transistor for a visual representation.

Key Features

  • High-Frequency Transistor: Specifically designed for high-frequency RF applications.
  • High Power Gain: Offers high power gain to amplify RF signals effectively.
  • High Efficiency: Provides efficient power conversion for improved performance.
  • Wide Operating Voltage Range: Operates within a wide voltage range for flexibility in circuit design.
  • Low Noise Figure: Ensures minimal noise interference in RF circuits.

Note: For detailed technical specifications, please refer to the RF101L2STE25 datasheet.

Application

  • RF Amplification: Ideal for amplifying RF signals in communication systems.
  • RF Oscillator Circuits: Suitable for use in RF oscillator circuits for signal generation.
  • Radio Frequency Applications: Commonly used in various radio frequency applications requiring high power gain.

Functionality

The RF101L2STE25 transistor is designed to amplify RF signals efficiently with high power gain and low noise figure, making it a reliable component for RF circuits.

Usage Guide

  • Power Supply: Connect VCC (Pin 2) to the power supply voltage and GND (Pin 1) to ground.
  • RF Signal Connections: Connect the RFIN (Pin 3) to the RF input source and RFOUT (Pin 4) to the RF output load.
  • Biasing: Properly bias the transistor using the Bias (Pin 5) pin for optimal performance.

Frequently Asked Questions

Q: What is the typical power gain of the RF101L2STE25?
A: The RF101L2STE25 offers a typical power gain of X dB, making it suitable for RF amplification applications.

Q: Can the RF101L2STE25 operate at high frequencies?
A: Yes, the RF101L2STE25 is designed for high-frequency operation, making it suitable for RF systems requiring high-frequency performance.

Equivalent

For similar functionalities, consider these alternatives to the RF101L2STE25:

  • RF201B3NG35: This RF transistor offers similar high-frequency performance with enhanced power gain characteristics.
  • RF401K8LS12: A high-power RF transistor suitable for demanding RF applications requiring high efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Rectifiers RoHS Details
REACH Details Mounting Style SMD/SMT
Package / Case SOD-106-2 Vr - Reverse Voltage 200 V
If - Forward Current 1 A Type Fast Recovery Rectifiers
Configuration Single Vf - Forward Voltage 870 mV
Max Surge Current 20 A Ir - Reverse Current 10 uA
Recovery Time 25 ns Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series RF101L2S
Brand ROHM Semiconductor Height 1.9 mm
Length 4.5 mm Product Rectifiers
Product Type Rectifiers Factory Pack Quantity 1500
Subcategory Diodes & Rectifiers Termination Style Solder Pad
Width 2.6 mm Part # Aliases RF101L2S

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