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RD3L150SNTL1

Transistor for High-Power Fields

Quantity Unit Price(USD) Ext. Price
1000 $0.316 $316.00
500 $0.331 $165.50
100 $0.362 $36.20
30 $0.414 $12.42
10 $0.468 $4.68
1 $0.572 $0.57

Inventory:6,028

*The price is for reference only.
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Overview of RD3L150SNTL1

The RD3L150SNTL1 is a high-performance Schottky diode featuring a low forward voltage drop and fast switching characteristics. It is designed for use in power rectification, reverse polarity protection, and voltage clamping applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • K: Cathode Terminal
  • A: Anode Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the RD3L150SNTL1 diode for visual representation.

Key Features

  • Low Forward Voltage Drop: Ensures minimal power loss and high efficiency in power rectification applications.
  • Fast Switching Speed: Allows for quick response times in high-frequency rectification circuits.
  • High Temperature Stability: Maintains reliable performance across a wide operating temperature range.
  • Reverse Polarity Protection: Safeguards electronic circuits from damage due to reverse voltage connection.
  • Voltage Clamping: Helps limit the voltage level across a circuit, protecting sensitive components.

Note: For detailed technical specifications, please refer to the RD3L150SNTL1 datasheet.

Application

  • Power Rectification: Ideal for use in power supply circuits for converting AC to DC power efficiently.
  • Reverse Polarity Protection: Used to prevent damage to electronic devices from incorrect power supply connections.
  • Voltage Clamping: Employed in circuits to limit voltage spikes and protect components from overvoltage conditions.

Functionality

The RD3L150SNTL1 Schottky diode efficiently rectifies power, protects against reverse polarity, and clamps voltages within electronic circuits, ensuring reliable operation.

Usage Guide

  • Mounting: Connect the cathode (K) terminal to the circuit's ground reference and the anode (A) terminal to the positive voltage source.
  • Forward Voltage Drop: Ensure the forward voltage drop meets the circuit requirements for efficient power conversion.
  • Switching Speed: Consider the fast switching speed of the diode for applications requiring quick response times.

Frequently Asked Questions

Q: Can the RD3L150SNTL1 be used in high-temperature environments?
A: Yes, the RD3L150SNTL1 offers high temperature stability and can operate effectively in elevated temperature conditions.

Equivalent

For alternative Schottky diodes with similar characteristics, consider:

  • RD5.1M-T1B: A Schottky diode offering comparable performance specifications in a different package.
  • RB160M-30: This Schottky diode provides similar functionality with slightly different voltage and current ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 18 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Series RD3L
Brand ROHM Semiconductor Configuration Single
Fall Time 15 ns Forward Transconductance - Min 7 S
Product Type MOSFET Rise Time 30 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 10 ns
Part # Aliases RD3L150SN Unit Weight 0.011640 oz

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RD3L150SNTL1

Transistor for High-Power Fields

Inventory:

6,028