R1LV1616HSA-4SI#B1

The R1LV1616HSA-4SI#B1 is a high-speed CMOS static RAM (SRAM) organized as 1,048,576 words by 16 bits. It operates at a high speed and is accessed via a common I/O with separate control signals for read and write operations. This SRAM is designed for use in high-performance computing, networking, and embedded systems applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A0-A18: Address input pins
• OE: Output enable
• WE: Write enable
• CE1, CE2: Chip enable inputs
• UB, LB: Upper byte and lower byte data input/output pins
• VCC: Power supply
• GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the R1LV1616HSA-4SI#B1 SRAM for a visual representation.

Key Features

• High-Speed Operation: The R1LV1616HSA-4SI#B1 offers fast access times, making it suitable for high-performance applications.
• Common I/O Architecture: This SRAM utilizes a common I/O for both read and write operations, simplifying the interfacing process.
• Low Power Consumption: With its CMOS technology, the R1LV1616HSA-4SI#B1 minimizes power usage for energy-efficient operation.
• Wide Voltage Operating Range: It operates within a wide voltage range, providing flexibility in system design and compatibility.
• Industry-Standard Package: Available in standard surface mount packages for easy integration into various systems.

Note: For detailed technical specifications, please refer to the R1LV1616HSA-4SI#B1 datasheet.

Application

• High-Performance Computing: Ideal for use in high-speed computing systems, including servers and workstations.
• Networking Equipment: Suitable for buffering and caching functions in network routers, switches, and communication systems.
• Embedded Systems: Used in embedded applications such as industrial control, automotive electronics, and consumer electronics.

Functionality

The R1LV1616HSA-4SI#B1 is a high-speed CMOS static RAM designed to provide fast and reliable data storage and retrieval in various high-performance electronic systems.

Usage Guide

• Power Supply: Connect VCC to the power supply and GND to the ground reference.
• Address and Data Connections: Properly connect the address and data input/output pins based on the system requirements.
• Control Signals: Utilize OE, WE, CE1, and CE2 inputs to control the read and write operations effectively.

Frequently Asked Questions

Q: Can the R1LV1616HSA-4SI#B1 operate at low voltages?
A: Yes, this SRAM is designed to operate at low voltage levels, making it suitable for low-power applications.