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Q601E3

High-power triacs for industrial control applications

Inventory:4,190

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Overview of Q601E3

The Q601E3 is a high-power N-channel MOSFET transistor designed for use in power electronics applications. It features a low on-resistance and high current handling capacity, making it suitable for high-power switching circuits and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the Q601E3 MOSFET for a visual representation.

Key Features

  • High Power Handling: The Q601E3 is capable of handling high power levels, making it suitable for power applications.
  • Low On-Resistance: This MOSFET transistor has a low on-resistance, minimizing power loss and heat generation.
  • Fast Switching Speed: With its fast switching characteristics, the Q601E3 enables efficient switching operations in electronic circuits.
  • Robust Construction: The Q601E3 is built with robust materials for enhanced durability and reliability in operation.
  • Wide Voltage Range: It can operate within a wide voltage range, providing flexibility in various circuit designs.

Note: For detailed technical specifications, please refer to the Q601E3 datasheet.

Application

  • Power Electronics: Ideal for use in power supply circuits, motor control, and audio amplification.
  • Switching Circuits: Suitable for high-power switching applications in industrial and automotive systems.
  • Voltage Regulation: Can be utilized in voltage regulation circuits for stable power delivery.

Functionality

The Q601E3 N-channel MOSFET transistor is used to control high-power circuits by switching the flow of current between the drain and source terminals. It offers efficient power handling and control capabilities.

Usage Guide

  • Gate Control: Apply a suitable voltage to the gate terminal to control the switching behavior of the MOSFET.
  • Drain-Source Connections: Connect the load or circuit to the drain and source terminals for current flow control.
  • Heat Dissipation: Ensure proper heat sinking or cooling mechanisms for high-power applications to manage heat dissipation.

Frequently Asked Questions

Q: Is the Q601E3 suitable for high-frequency applications?
A: While the Q601E3 offers fast switching speeds, it is recommended to check the datasheet for detailed frequency response characteristics.

Equivalent

For comparable alternatives to the Q601E3, consider the following:

  • Q602E3: A variant with slightly different specifications but similar power handling capabilities.
  • Q601E4: An upgraded version offering enhanced performance characteristics for power electronics applications.
  • Q600E3: A similar MOSFET transistor with comparable features and functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code No Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer LITTELFUSE INC
Part Package Code TO-92 Package Description CYLINDRICAL, O-PBCY-W3
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.30.00.80
Samacsys Manufacturer LITTELFUSE Additional Feature HIGH RELIABILITY
Case Connection ISOLATED Configuration SINGLE
Critical Rate of Rise of Commutation Voltage-Min 1 V/us Critical Rate of Rise of Off-State Voltage-Min 15 V/us
DC Gate Trigger Current-Max 10 mA DC Gate Trigger Voltage-Max 2 V
Holding Current-Max 20 mA JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3 JESD-609 Code e3
Leakage Current-Max 1 mA Moisture Sensitivity Level 2
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 125 °C Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY Package Shape ROUND
Package Style CYLINDRICAL Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified RMS On-state Current-Max 1 A
Repetitive Peak Off-state Voltage 600 V Surface Mount NO
Terminal Finish MATTE TIN Terminal Form WIRE
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 40
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC

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