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PSS35MC1FT

Version 6 INTELLIGENT CIB

Inventory:2,978

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Overview of PSS35MC1FT

The PSS35MC1FT is a high-performance MOSFET transistor designed for power switching applications. This transistor features a low on-resistance and high current capability, making it ideal for efficient power control in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Drain Voltage Supply
  • VSS: Source Voltage Supply
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PSS35MC1FT MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The PSS35MC1FT offers a low on-resistance, reducing power losses and improving efficiency in power switching applications.
  • High Current Capability: With its high current-handling capacity, this MOSFET can handle substantial power loads in circuits.
  • Fast Switching Speed: The transistor provides fast switching times, allowing for rapid on/off operation in power control.
  • Voltage Compatibility: The PSS35MC1FT is compatible with a wide range of voltage supplies, offering flexibility in circuit design.
  • Temperature Resilience: This MOSFET is designed to operate reliably across temperature variations, ensuring stable performance in different environmental conditions.

Note: For detailed technical specifications, please refer to the PSS35MC1FT datasheet.

Application

  • Power Inverters: Suitable for use in power inverters for converting DC power to AC power.
  • Motor Control: Ideal for controlling motors and electromechanical devices in various electronic systems.
  • Switching Regulators: Used in switching regulator circuits for efficient power conversion.

Functionality

The PSS35MC1FT MOSFET transistor is designed to efficiently control power in electronic circuits by switching current flow between the drain and source terminals. It offers low on-resistance and high current capability for effective power management.

Usage Guide

  • Gate Drive: Apply appropriate gate voltage to turn the MOSFET on and off.
  • Drain-Source Connection: Connect the load between the drain and source terminals for power control.
  • Voltage Supplies: Provide suitable voltage levels to the drain and source pins for correct operation.

Frequently Asked Questions

Q: Is the PSS35MC1FT suitable for high-temperature environments?
A: Yes, the PSS35MC1FT is designed to operate reliably at elevated temperatures, making it suitable for high-temperature applications.

Equivalent

For similar functionalities, consider these alternatives to the PSS35MC1FT:

  • IRF3205: A high-power MOSFET transistor with comparable specifications to the PSS35MC1FT.
  • FDN327N: This MOSFET offers similar performance characteristics and can be used as an alternative to the PSS35MC1FT.
  • AUIRF3710: An MOSFET transistor suitable for power switching applications, providing similar functionality to the PSS35MC1FT.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration 6-Pack
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 25 A Minimum Operating Temperature - 30 C
Maximum Operating Temperature + 110 C Brand Mitsubishi Electric
Mounting Style Screw Mount Product Type IGBT Modules
Factory Pack Quantity 10 Subcategory IGBTs

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