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PSMN0R9-25YLC,115

MOSFET PSMN0R9-25YLC/SOT669/LFPAK

Inventory:8,860

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Overview of PSMN0R9-25YLC,115

The PSMN0R9-25YLC,115 is a power MOSFET designed for high-performance applications where efficient power management is essential. This MOSFET features a low on-state resistance and high current capability, making it ideal for power switching and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • SOURCE: Source terminal for the MOSFET
  • DRAIN: Drain terminal for the MOSFET
  • VCC: Positive power supply
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PSMN0R9-25YLC,115 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The PSMN0R9-25YLC,115 offers low on-state resistance for efficient power transfer.
  • High Current Capability: With its high current-handling capacity, this MOSFET is suitable for applications requiring significant power handling.
  • High Switching Speed: The MOSFET provides fast switching characteristics, enabling rapid power control.
  • Low Gate Threshold Voltage: The low gate threshold voltage allows for effective control and modulation of the MOSFET.
  • Temperature Stability: This MOSFET maintains stable performance over a wide temperature range, ensuring reliable operation in various conditions.

Note: For detailed technical specifications, please refer to the PSMN0R9-25YLC,115 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, including DC-DC converters and motor control applications.
  • Switching Circuits: Suitable for power switching circuits requiring high efficiency and fast response times.
  • Audio Amplification: Can be utilized in audio amplifier circuits for high-power audio applications.

Functionality

The PSMN0R9-25YLC,115 power MOSFET is designed to efficiently control and switch high-power loads in various electronic circuits, ensuring optimal performance and energy management.

Usage Guide

  • Power Supply: Connect the VCC pin to the positive power supply and the GND pin to power ground for proper operation.
  • Control Signals: Apply appropriate voltage levels to the GATE pin to control the switching action of the MOSFET.
  • Load Connection: Connect the load between the DRAIN and SOURCE pins to enable power switching.

Frequently Asked Questions

Q: Can the PSMN0R9-25YLC,115 be used in high-temperature environments?
A: Yes, the PSMN0R9-25YLC,115 is designed to operate efficiently in high-temperature environments, ensuring reliable performance under elevated temperatures.

Equivalent

For similar functionalities, consider these alternatives to the PSMN0R9-25YLC,115:

  • IRF520N: A power MOSFET with comparable characteristics suitable for power management applications.
  • BUZ11: This MOSFET offers similar power handling capabilities and switching characteristics to the PSMN0R9-25YLC,115.
  • FDP8870: An alternative MOSFET with low on-state resistance and high current capacity for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Type number PSMN0R9-25YLC Package version SOT669
Package name LFPAK56; Power-SO8 Product status Production
Channel type N Nr of transistors 1
VDS [max] (V) 25 RDSon [max] @ VGS = 10 V (mΩ) 0.99
RDSon [max] @ VGS = 4.5 V (mΩ) 1.25 Tj [max] (°C) 175
ID [max] (A) 100 QGD [typ] (nC) 14
QG(tot) [typ] @ VGS = 4.5 V (nC) 51 QG(tot) [typ] @ VGS = 10 V (nC) 110
Ptot [max] (W) 272 Qr [typ] (nC) 60
VGSth [typ] (V) 1.41 Automotive qualified N
Ciss [typ] (pF) 6775 Coss [typ] (pF) 1437
Date 2011-02-25 Packing SOT669_115
Orderable part number PSMN0R9-25YLC,115 Chemical content PSMN0R9-25YLC

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PSMN0R9-25YLC,115

MOSFET PSMN0R9-25YLC/SOT669/LFPAK

Inventory:

8,860