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PHX9NQ20T

High-Power MOSFET for Railway Applications

Inventory:9,666

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Overview of PHX9NQ20T

The PHX9NQ20T is a power MOSFET transistor designed for high-speed switching applications in power supplies, motor control, and inverters. It features a low on-state resistance and high input impedance, making it efficient for power management.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PHX9NQ20T MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The PHX9NQ20T is optimized for high-speed switching applications, ensuring rapid switching transitions.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power dissipation and heat generation during operation.
  • High Input Impedance: The high input impedance allows for efficient control of the MOSFET, leading to improved power management.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation to maintain optimal performance under high load conditions.

Note: For detailed technical specifications, please refer to the PHX9NQ20T datasheet.

Application

  • Power Supplies: Suitable for use in power supply units to regulate and control power flow.
  • Motor Control: Ideal for motor control applications in industrial and automotive systems.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The PHX9NQ20T power MOSFET is designed to facilitate high-speed switching operations with low on-state resistance, making it ideal for various power management applications.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate (G) pin to turn the MOSFET on or off.
  • Drain Connection: Connect the load to the Drain (D) pin of the MOSFET.
  • Source Connection: Connect the Source (S) pin to the ground reference.

Frequently Asked Questions

Q: Is the PHX9NQ20T suitable for high-frequency applications?
A: Yes, the PHX9NQ20T is designed for high-speed switching applications, including high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the PHX9NQ20T:

  • FDP8870: A power MOSFET with comparable performance characteristics for high-speed switching applications.
  • IRF3205: This MOSFET provides similar functionality and can be used as an alternative based on specific design requirements.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 5.2 A Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 25 W
Channel Mode Enhancement Brand NXP Semiconductors
Configuration Single Fall Time 15 ns
Height 9.3 mm Length 10.3 mm
Product Type MOSFET Rise Time 19 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 8 ns Width 4.6 mm
Part # Aliases PHX9NQ20T,127 Unit Weight 0.068784 oz

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PHX9NQ20T

High-Power MOSFET for Railway Applications

Inventory:

9,666