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PGH200N16

PGH200N16 stands out as a top-tier Thyristor (SCR) component, guaranteeing optimal power handling capabilities

Inventory:4,541

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Overview of PGH200N16

The PGH200N16 is a high-voltage power MOSFET designed for use in power electronic applications. It features a high drain-source voltage rating and low on-state resistance, making it suitable for high-power switching and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source
  • D: Drain
  • G: Gate
  • VCC: Positive Power Supply
  • GND: Ground
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PGH200N16 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The PGH200N16 offers a high drain-source voltage rating, enabling it to handle high voltage applications.
  • Low On-State Resistance: With its low on-state resistance, this MOSFET minimizes power loss and heat generation during operation.
  • High Power Handling: Designed for high-power applications, the PGH200N16 can efficiently switch and amplify large power loads.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, making it suitable for high-frequency applications.
  • Robust Construction: Built to withstand high voltage and power levels, the PGH200N16 is designed for reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the PGH200N16 datasheet.

Application

  • Power Amplification: Ideal for use in power amplification circuits, the PGH200N16 can drive high-power loads with efficiency.
  • Switching Power Supplies: Suitable for switching power supply applications requiring high voltage and power capabilities.
  • Motor Control: The PGH200N16 can be used in motor control systems to handle high current and voltage requirements.

Functionality

The PGH200N16 is a high-voltage power MOSFET designed for efficient power switching and amplification. It provides robust performance in high-power applications.

Usage Guide

  • Power Supply: Connect the positive power supply (VCC) and ground (GND) to the corresponding pins for proper operation.
  • Gate Control: Apply the control voltage to the gate (G) to switch the MOSFET between on and off states.
  • Load Connection: Connect the load between the drain (D) and source (S) pins to utilize the MOSFET for power amplification or switching.

Frequently Asked Questions

Q: Is the PGH200N16 suitable for high-frequency switching applications?
A: Yes, the PGH200N16 offers fast switching speed and is suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the PGH200N16:

  • IRFP4668: A high-voltage MOSFET with similar power handling capabilities and voltage ratings.
  • FQP47P06: This MOSFET offers comparable performance and voltage ratings, suitable for high-power applications.
  • IXFH50N50: An alternative high-voltage MOSFET designed for power switching and amplification applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SCR Modules RoHS Details
Rated Repetitive Off-State Voltage VDRM 1.6 kV Gate Trigger Voltage - Vgt 3 V
Gate Trigger Current - Igt 150 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C Mounting Style Screw Mount
Brand KYOCERA AVX Product Type SCR Modules
Factory Pack Quantity 24 Subcategory Thyristors
Technology Si

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PGH200N16

PGH200N16 stands out as a top-tier Thyristor (SCR) component, guaranteeing optimal power handling capabilities

Inventory:

4,541