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PBSS2515E

PBSS2515E is an NPN Bipolar Transistor with a 0.5 A 15 V rating and an HFE of 90, designed for small signal applications

Inventory:5,154

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Overview of PBSS2515E

The PBSS2515E is a NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor with a high current rating, designed for use in low voltage amplification and switching applications. This transistor features a low VCEsat voltage and high current capability, making it suitable for efficient power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Base (B): Input terminal for controlling the transistor
  • Emitter (E1): Emitter of the first NPN transistor
  • Collector (C1): Collector of the first NPN transistor
  • Emitter (E2): Emitter of the second NPN transistor
  • Collector (C2): Collector of the second NPN transistor

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the PBSS2515E transistor for better understanding of its usage.

Key Features

  • NPN/NPN BISS Transistor: Dual NPN transistor in a single package, offering design flexibility for various applications.
  • Low VCEsat Voltage: The PBSS2515E provides a low VCEsat voltage, reducing power dissipation and improving efficiency.
  • High Current Rating: With a high current capability, this transistor can handle significant load currents in circuit designs.
  • Fast Switching Speed: The PBSS2515E offers fast switching times, enabling quick signal amplification and switching operations.
  • Integrated Protection Diodes: Includes built-in protection diodes for preventing voltage spikes and ensuring safer operation.

Note: For detailed technical specifications, please refer to the PBSS2515E datasheet.

Application

  • Low Voltage Amplification: Ideal for use in low voltage amplification circuits due to its low VCEsat voltage.
  • Switching Applications: Suitable for switching applications where fast response times and high current handling are required.
  • Power Management: Used in electronic circuits for efficient power management and load control.

Functionality

The PBSS2515E NPN/NPN transistor is designed to amplify signals and control currents in low voltage applications. Its low VCEsat voltage and high current capability make it a reliable component for various electronic designs.

Usage Guide

  • Base Connection: Connect the input signal to the Base (B) terminal to control the transistor's operation.
  • Emitter and Collector Connections: Use the Emitter and Collector terminals for making input and output connections in the circuit.
  • Load Connection: Connect the load to the Collector terminal to control the current flow.

Frequently Asked Questions

Q: What is the typical VCEsat voltage of the PBSS2515E?
A: The PBSS2515E features a low VCEsat voltage, typically around 0.5V for efficient operation.

Q: Can the PBSS2515E handle high current loads?
A: Yes, the PBSS2515E is designed to handle high current loads with its high current rating and robust construction.

Equivalent

For similar functionalities, consider these alternatives to the PBSS2515E:

  • PBSS5335PA: Another NPN/NPN BISS transistor with comparable characteristics to the PBSS2515E for similar applications.
  • PBSS4150J: A dual NPN transistor offering similar performance and current handling capabilities to the PBSS2515E.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT Brand Nexperia
Product Type BJTs - Bipolar Transistors Subcategory Transistors

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PBSS2515E

PBSS2515E is an NPN Bipolar Transistor with a 0.5 A 15 V rating and an HFE of 90, designed for small signal applications

Inventory:

5,154