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NZT660

ON Semi NZT660 PNP Transistor, 3 A, 60 V, 3 + Tab-Pin SOT-223

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Overview of NZT660

The NZT660 is a PNP silicon dual transistor designed for amplifier and switching applications. This transistor features high current gain and low saturation voltage, making it suitable for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter for transistor 1
  • B: Base for transistor 1
  • C: Collector for transistor 1
  • E: Emitter for transistor 2
  • B: Base for transistor 2
  • C: Collector for transistor 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NZT660 for a visual representation.

Key Features

  • Dual Transistor Design: Consists of two transistors in a single package for convenient circuit integration.
  • High Current Gain: Provides high current amplification capabilities for improved circuit performance.
  • Low Saturation Voltage: Features low voltage drop when fully conducting, reducing power dissipation.
  • PNP Silicon Transistor: Utilizes PNP silicon technology for efficient signal amplification and switching.
  • Compact Package: Housed in a space-saving and easy-to-use transistor package.

Note: For detailed technical specifications, please refer to the NZT660 datasheet.

Application

  • Audio Amplifiers: Ideal for use in audio amplifier circuits due to its high current gain.
  • Switching Circuits: Suitable for switching applications where low saturation voltage is crucial.
  • Signal Processing: Used in various signal processing circuits for signal amplification and conditioning.

Functionality

The NZT660 is a dual PNP silicon transistor that offers high current gain and low saturation voltage, making it versatile for amplifier and switching applications in electronic circuits.

Usage Guide

  • Pin Configuration: Connect the Emitter, Base, and Collector pins of each transistor as per the circuit requirements.
  • Biasing: Ensure proper biasing to achieve desired amplification or switching characteristics.
  • Heat Management: Employ heat sinks if operating at high currents to maintain transistor temperature within limits.

Frequently Asked Questions

Q: Is the NZT660 suitable for high-frequency applications?
A: The NZT660 is optimized for low to medium frequency applications due to its characteristics.

Equivalent

For similar functionalities, consider these alternatives to the NZT660:

  • NXP PHPT610: Another dual PNP transistor with comparable characteristics and performance.
  • ON Semiconductor PZT2222A: A dual NPN transistor providing similar amplification and switching capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid NZT660 Pbfree Code Yes
Part Life Cycle Code Active Ihs Manufacturer ON SEMICONDUCTOR
Package Description SOT-223, 4 PIN Manufacturer Package Code 318H-01
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 4 Weeks Samacsys Manufacturer onsemi
Case Connection COLLECTOR Collector Current-Max (IC) 3 A
Collector-Emitter Voltage-Max 60 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JESD-30 Code R-PDSO-G4
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 4
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 2 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON
Transition Frequency-Nom (fT) 75 MHz

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