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NVTR01P02LT1G

With a gate threshold voltage of 1.25V and a typical leakage current of 250uA, NVTR01P02LT1G is suitable for low-power applications

Inventory:9,912

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Overview of NVTR01P02LT1G

The NVTR01P02LT1G is a dual N-channel MOSFET transistor designed for use in power management applications. This transistor features two independent N-channel MOSFETs in a single package, providing efficient switching and control in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate of MOSFET 1
  • D: Drain of MOSFET 1
  • S: Source of MOSFET 1
  • G: Gate of MOSFET 2
  • D: Drain of MOSFET 2
  • S: Source of MOSFET 2

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the NVTR01P02LT1G transistor for a more visual representation.

Key Features

  • Dual N-Channel MOSFETs: The NVTR01P02LT1G includes two N-channel MOSFETs, allowing for versatile use in power management applications.
  • Low On-Resistance: This transistor offers low on-resistance, minimizing power loss and improving efficiency in switching circuits.
  • High Current Handling Capacity: With its dual MOSFET design, the NVTR01P02LT1G can handle high currents for power control applications.
  • Compact Package: The transistor is housed in a compact and efficient package, making it suitable for space-constrained designs.
  • Temperature Stability: The NVTR01P02LT1G maintains stability over a wide temperature range, ensuring reliable performance in various environmental conditions.

Note: For detailed technical specifications, please refer to the NVTR01P02LT1G datasheet.

Applications

  • Power Management: The NVTR01P02LT1G is commonly used in power management circuits for voltage regulation, power switching, and motor control.
  • Inverter Systems: This dual MOSFET transistor can be utilized in inverter systems for converting DC power to AC power in applications such as solar inverters, UPS systems, and motor drives.
  • Switching Circuits: The NVTR01P02LT1G is ideal for use in switching circuits for on/off control of electrical loads in various electronic devices.

Functionality

The NVTR01P02LT1G integrates two N-channel MOSFET transistors in a single package, providing flexibility and efficiency in power management and control applications. It offers low on-resistance, high current handling capacity, and temperature stability for reliable operation.

Usage Guide

  • Gate Connections: Connect the gate terminals of each MOSFET to the controlling circuit for switching operation.
  • Drain and Source Connections: Use the drain and source terminals of each MOSFET to connect to the load and power supply, respectively.
  • Heat Dissipation: Ensure proper heat sinking or thermal management for the NVTR01P02LT1G to maintain optimal performance.

Frequently Asked Questions

Q: Can the NVTR01P02LT1G be used in high-temperature environments?
A: Yes, the NVTR01P02LT1G offers temperature stability and can operate reliably in high-temperature conditions.

Equivalent

For similar functionalities, consider these alternatives to the NVTR01P02LT1G:

  • IRF540N: A popular N-channel MOSFET transistor with high current handling capacity and low on-resistance.
  • BS170: This N-channel MOSFET transistor is known for its compact size and efficiency in power control applications.
  • IRL540N: An enhancement mode N-channel MOSFET transistor that offers fast switching speeds and low gate-to-source voltage.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) -20
VGS Max (V) 12 VGS(th) Max (V) -1.25
ID Max (A) 1.3 PD Max (W) 0.4
RDS(on) Max @ VGS = 2.5 V (mΩ) 350 RDS(on) Max @ VGS = 4.5 V (mΩ) 220
Qg Typ @ VGS = 10 V (nC) 3.1 Ciss Typ (pF) 225
Pricing ($/Unit) $0.1022

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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NVTR01P02LT1G

With a gate threshold voltage of 1.25V and a typical leakage current of 250uA, NVTR01P02LT1G is suitable for low-power applications

Inventory:

9,912
Overview of NVTR01P02LT1G Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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