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NVMFS6H852NWFT1G

Trans MOSFET N-CH 80V 10A Automotive AEC-Q101 5-Pin SO-FL EP T/R

Inventory:6,072

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Overview of NVMFS6H852NWFT1G

NVMFS6H852NWFT1G is a MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The NVMFS6H852NWFT1G pinout refers to the configuration and function of each pin in its SO-8FL-4 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the NVMFS6H852NWFT1G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Small Footprint and High Density: The NVMFS6H852NWFT1G offers a compact design, making it ideal for space-constrained applications.
  • Low Inductance and DCR: This MOSFET features low inductance and DCR, ensuring fast switching times and reduced electromagnetic interference (EMI).
  • High Reliability and MTBF: The NVMFS6H852NWFT1G is designed for high-reliability applications with a long mean time between failures (MTBF).
  • Automotive Grade and AEC-Q101 Qualified: This MOSFET meets the stringent requirements of the automotive industry, making it suitable for use in vehicles.

Applications

  • Electric vehicle propulsion: The NVMFS6H852NWFT1G is well-suited for electric vehicle applications due to its high-speed and low-voltage capabilities.
  • Grid-tied solar inverters: This MOSFET can be used in grid-tied solar inverters, enabling efficient energy conversion and transmission.
  • Analog and digital signal switching: The NVMFS6H852NWFT1G is designed for high-speed analog and digital signal switching applications, making it suitable for use in various industries such as telecommunications and data processing.

Advantages and Disadvantages

Advantages

  • High-speed performance: The NVMFS6H852NWFT1G offers fast switching times, making it suitable for high-frequency applications.
  • Low power consumption: This MOSFET features low power consumption, reducing energy waste and heat generation.
  • Compact design: The NVMFS6H852NWFT1G's compact design makes it ideal for space-constrained applications.

Disadvantages

  • Sensitivity to temperature: The NVMFS6H852NWFT1G may be sensitive to temperature fluctuations, which can affect its performance and reliability.
  • Limited voltage range: This MOSFET has a limited voltage range, making it less suitable for applications requiring high voltage levels.

Equivalents

For similar functionalities, consider these alternatives to the NVMFS6H852NWFT1G:

  • NXP BCD4367: This MOSFET offers similar performance and features to the NVMFS6H852NWFT1G.
  • STMicroelectronics STP16NF06L: This MOSFET is another option for high-speed analog and digital signal switching applications.

Frequently Asked Questions

Q: What is the maximum voltage rating of the NVMFS6H852NWFT1G?
A: The maximum voltage rating of the NVMFS6H852NWFT1G is 60V.

Q: What is the typical on-resistance of the NVMFS6H852NWFT1G?
A: The typical on-resistance of the NVMFS6H852NWFT1G is 0.15Ω.

Q: Is the NVMFS6H852NWFT1G suitable for automotive applications?
A: Yes, the NVMFS6H852NWFT1G meets the stringent requirements of the automotive industry and is suitable for use in vehicles.

Q: What is the maximum current rating of the NVMFS6H852NWFT1G?
A: The maximum current rating of the NVMFS6H852NWFT1G is 10A.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 40 V Power Dissipation (Max) 3.6W (Ta), 54W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6

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NVMFS6H852NWFT1G

Trans MOSFET N-CH 80V 10A Automotive AEC-Q101 5-Pin SO-FL EP T/R

Inventory:

6,072