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NVMFS6H818NWFT1G

Power MOSFET with an 80V rating, capable of handling currents up to 123A, featuring a low on-resistance of 3

Inventory:5,341

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Overview of NVMFS6H818NWFT1G

The NVMFS6H818NWFT1G is a Power MOSFET transistor designed for high-efficiency power management applications. It features a low on-state resistance and high current-handling capability, making it suitable for various power conversion and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVMFS6H818NWFT1G for a visual representation.

Key Features

  • Low On-State Resistance: The NVMFS6H818NWFT1G offers a low RDS(on) for efficient power handling.
  • High Current Capability: This Power MOSFET can handle high current levels, making it suitable for power applications.
  • Fast Switching Speed: With its fast switching characteristics, this transistor enables rapid switching in power circuits.
  • Enhanced Efficiency: The high-performance design of the NVMFS6H818NWFT1G contributes to improved power conversion efficiency.
  • Temperature Stability: This MOSFET maintains stable performance across a wide temperature range.

Note: For detailed technical specifications, please refer to the NVMFS6H818NWFT1G datasheet.

Application

  • Power Management: Ideal for power management applications in various electronic systems.
  • Voltage Regulation: Suitable for voltage regulation and power switching tasks in circuits.
  • Motor Control: Can be used in motor control applications for efficient power handling.

Functionality

The NVMFS6H818NWFT1G Power MOSFET provides reliable and efficient power handling capabilities for applications requiring high current switching operations.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the switching operation.
  • Source and Drain: Connect the source (S) and drain (D) pins in the circuit according to the specifications.
  • Heat Dissipation: Ensure proper heat sinking for optimal thermal performance of the MOSFET.

Frequently Asked Questions

Q: Is the NVMFS6H818NWFT1G suitable for high-frequency switching applications?
A: Yes, the NVMFS6H818NWFT1G is designed for fast switching speeds and can be used in high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NVMFS6H818NWFT1G:

  • NVMFS5C443N: A Power MOSFET transistor with comparable specifications suitable for power management tasks.
  • NVMFS6H801N: This MOSFET offers similar performance characteristics to the NVMFS6H818NWFT1G for power handling applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type DFNW5 5x6 (FULL-CUT SO8FL WF) Case Outline 507BA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 80
VGS Max (V) ±20 VGS(th) Max (V) 4
ID Max (A) 123 PD Max (W) 136
RDS(on) Max @ VGS = 2.5 V (mΩ) ~NA~ RDS(on) Max @ VGS = 4.5 V (mΩ) ~NA~
RDS(on) Max @ VGS = 10 V (mΩ) 3.7 Qg Typ @ VGS = 4.5 V (nC) ~NA~
Qg Typ @ VGS = 10 V (nC) 46 Ciss Typ (pF) 3100
Pricing ($/Unit) $1.2625

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NVMFS6H818NWFT1G

Power MOSFET with an 80V rating, capable of handling currents up to 123A, featuring a low on-resistance of 3

Inventory:

5,341