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NVMFS5C460NLAFT1G

Non-Volatile Memory Field-Effect Transistor

Inventory:7,273

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Overview of NVMFS5C460NLAFT1G

The NVMFS5C460NLAFT1G is a 40V, 8.5mOhm, Power MOSFET designed for high-efficiency power management applications. This MOSFET offers low RDS(ON) and high current capability, making it suitable for various power supply and motor control circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • VSS: Substrate Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVMFS5C460NLAFT1G MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a 40V rating, the NVMFS5C460NLAFT1G can handle a wide range of voltage levels in power applications.
  • Low RDS(ON): The 8.5mOhm RDS(ON) ensures minimal power loss and high power efficiency in operation.
  • High Current Capability: This MOSFET can handle high current loads, making it suitable for various power management requirements.
  • Fast Switching Speed: Offers fast switching characteristics for improved performance in switching circuits.
  • Enhanced Thermal Performance: Designed for efficient heat dissipation to maintain temperature stability during operation.

Note: For detailed technical specifications, please refer to the NVMFS5C460NLAFT1G datasheet.

Application

  • Power Supply Units: Ideal for use in power supply units for efficient power distribution.
  • Motor Control: Suitable for motor control applications requiring high-current handling capability.
  • Power Inverters: Used in power inverters for converting DC power to AC power with high efficiency.

Functionality

The NVMFS5C460NLAFT1G Power MOSFET is designed to facilitate efficient power management with low RDS(ON) and high current handling capabilities. It provides reliable performance in various power-oriented applications.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the gate driver for controlling the MOSFET.
  • Source and Drain Connections: Establish the source (S) and drain (D) connections as per the circuit requirements.
  • Drive Circuit: Ensure appropriate drive circuitry for efficient switching and power management.

Frequently Asked Questions

Q: What is the maximum voltage rating for the NVMFS5C460NLAFT1G?
A: The NVMFS5C460NLAFT1G has a maximum voltage rating of 40V, making it suitable for a wide range of power applications.

Q: Is the NVMFS5C460NLAFT1G suitable for high-frequency switching applications?
A: Yes, the NVMFS5C460NLAFT1G offers fast switching speed and can be used in high-frequency switching circuits with appropriate drive considerations.

Equivalent

For similar functionalities, consider these alternatives to the NVMFS5C460NLAFT1G:

  • FDMC8200: A comparable Power MOSFET featuring similar characteristics for power management applications.
  • AON6714: This MOSFET offers high current capability and low RDS(ON) for efficient power handling.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 40
VGS Max (V) 20 VGS(th) Max (V) 2
ID Max (A) 78 PD Max (W) 50
RDS(on) Max @ VGS = 2.5 V (mΩ) ~NA~ RDS(on) Max @ VGS = 4.5 V (mΩ) 7.2
RDS(on) Max @ VGS = 10 V (mΩ) 4.5 Qg Typ @ VGS = 4.5 V (nC) 11
Qg Typ @ VGS = 10 V (nC) 23 Ciss Typ (pF) 1300
Pricing ($/Unit) $0.584

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NVMFS5C460NLAFT1G

Non-Volatile Memory Field-Effect Transistor

Inventory:

7,273