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NVMFS5C430NLAFT1G

Product NVMFS5C430NLAFT1G is a transistor featuring N-MOSFET technology

Inventory:7,531

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Overview of NVMFS5C430NLAFT1G

The NVMFS5C430NLAFT1G is a Power MOSFET featuring a low ON-resistance and high-speed switching performance. It is designed for power management applications where efficiency and reliability are essential, making it ideal for use in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: Terminal for connecting to the load
  • SOURCE: Terminal connected to the ground or common reference

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVMFS5C430NLAFT1G MOSFET for a visual representation.

Key Features

  • Low ON-Resistance: The NVMFS5C430NLAFT1G offers low ON-resistance, minimizing power losses and improving efficiency.
  • High-Speed Switching: This Power MOSFET provides high-speed switching capabilities, suitable for applications requiring fast response times.
  • Enhanced Power Management: Designed for power management applications, this MOSFET ensures efficient power delivery and regulation.
  • Robust Construction: With reliable construction and performance, the NVMFS5C430NLAFT1G offers durability in demanding operating conditions.

Note: For detailed technical specifications, please refer to the NVMFS5C430NLAFT1G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems for efficient power distribution and control.
  • Motor Control: Suitable for motor control applications where high-speed switching is required.
  • Voltage Regulation: Used in circuits for voltage regulation and current flow control.

Functionality

The NVMFS5C430NLAFT1G Power MOSFET offers low ON-resistance and high-speed switching capabilities, making it a reliable component for power management and control applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the DRAIN terminal to the load requiring power management.
  • Ground Connection: Connect the SOURCE terminal to the ground reference of the circuit.

Frequently Asked Questions

Q: Is the NVMFS5C430NLAFT1G suitable for high-frequency applications?
A: Yes, the NVMFS5C430NLAFT1G is designed for high-speed switching, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NVMFS5C430NLAFT1G:

  • NVMFS5C403NLAFT1G: An alternative Power MOSFET with similar performance characteristics and operating parameters.
  • NVMFS5C440NLAFT1G: This MOSFET offers higher power handling capabilities while maintaining efficiency.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 40
VGS Max (V) 20 VGS(th) Max (V) 2
ID Max (A) 200 PD Max (W) 110
RDS(on) Max @ VGS = 2.5 V (mΩ) ~NA~ RDS(on) Max @ VGS = 4.5 V (mΩ) 2.2
RDS(on) Max @ VGS = 10 V (mΩ) 1.4 Qg Typ @ VGS = 4.5 V (nC) ~NA~
Qg Typ @ VGS = 10 V (nC) 70 Ciss Typ (pF) 4300
Pricing ($/Unit) $1.0203

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NVMFS5C430NLAFT1G

Product NVMFS5C430NLAFT1G is a transistor featuring N-MOSFET technology

Inventory:

7,531