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NVMFS4C01NT1G

NVMFS4C01NT1G: 30V, 49A power transistor with 5-pin SO-FL package

Inventory:6,980

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Overview of NVMFS4C01NT1G

The NVMFS4C01NT1G is a power MOSFET designed for use in high-current switching applications. This MOSFET features a low on-state resistance and fast switching characteristics, making it suitable for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • VDD: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVMFS4C01NT1G MOSFET for a visual representation.

Key Features

  • High Current Handling: The NVMFS4C01NT1G can handle high currents, making it suitable for power switching applications.
  • Low On-State Resistance: This MOSFET features a low on-state resistance to minimize power loss and improve efficiency.
  • Fast Switching Speed: With fast switching characteristics, the NVMFS4C01NT1G ensures rapid response in switching applications.
  • High Power Dissipation: The MOSFET can dissipate high power levels efficiently, enhancing its thermal performance.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in different voltage applications.

Note: For detailed technical specifications, please refer to the NVMFS4C01NT1G datasheet.

Application

  • Power Management: Ideal for power management tasks in electronic systems requiring high-current switching.
  • Motor Control: Suitable for motor control applications where high current switching is needed.
  • Voltage Regulation: Used in voltage regulation circuits to control and regulate power flow.

Functionality

The NVMFS4C01NT1G power MOSFET is designed to handle high currents with low on-state resistance and fast switching speeds, making it an efficient component for power management and control in various applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate (G) terminal for controlling the switching of the MOSFET.
  • Power Connections: Connect the drain (D) and source (S) terminals to the power supply and load, respectively.
  • Ground Connection: Ensure proper grounding by connecting the GND pin to the system ground.

Frequently Asked Questions

Q: Is the NVMFS4C01NT1G suitable for high-frequency switching applications?
A: Yes, the NVMFS4C01NT1G is designed for fast switching speeds and can be used in high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the NVMFS4C01NT1G:

  • IRFZ44N: A power MOSFET with comparable specifications and performance characteristics.
  • FDN302P: This MOSFET offers similar power handling capabilities and switching characteristics to the NVMFS4C01NT1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active, Not Rec Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 30
VGS Max (V) 20 VGS(th) Max (V) 2.2
ID Max (A) 299 PD Max (W) 161
RDS(on) Max @ VGS = 4.5 V (mΩ) 0.96 RDS(on) Max @ VGS = 10 V (mΩ) 0.67
Qg Typ @ VGS = 4.5 V (nC) 14 Qg Typ @ VGS = 10 V (nC) 139
Ciss Typ (pF) 10144 Pricing ($/Unit) $2.0424

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NVMFS4C01NT1G

NVMFS4C01NT1G: 30V, 49A power transistor with 5-pin SO-FL package

Inventory:

6,980