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NVMFD5C650NLWFT1G

Power MOSFET featuring two N-Channel transistors, each rated for 60V, 111A, and 4.2mΩ resistance

Inventory:8,032

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Overview of NVMFD5C650NLWFT1G

The NVMFD5C650NLWFT1G is a 650V, 9mOhm (typical) N-channel Power MOSFET designed for high-performance and efficiency in power electronic applications. This MOSFET is part of the NextPowerS3 portfolio, offering enhanced switching speed and ruggedness.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • N/SBV: Substrate/Body Diode
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NVMFD5C650NLWFT1G MOSFET for a visual representation.

Key Features

  • High Voltage Rating: 650V voltage rating for robust performance in high-power applications.
  • Low On-Resistance: With a typical on-resistance of 9mOhm, the MOSFET offers efficiency in power conversion.
  • Fast Switching Speed: NextPowerS3 technology provides enhanced switching characteristics for improved efficiency.
  • Rugged Design: The NVMFD5C650NLWFT1G is designed to withstand high-stress conditions for reliable operation.
  • Enhanced Thermal Performance: Features optimized thermal performance for better heat dissipation.

Note: For detailed technical specifications, please refer to the NVMFD5C650NLWFT1G datasheet.

Application

  • Power Supplies: Ideal for use in high-power switching power supply applications.
  • Motor Drives: Suitable for motor control and drive systems requiring high voltage handling.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The NVMFD5C650NLWFT1G is a high-voltage N-channel Power MOSFET designed to provide efficient power switching capabilities in various electronic systems. It offers reliable performance and enhanced efficiency in power conversion applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the ON/OFF state of the MOSFET.
  • Power Connections: Connect the drain and source pins to the respective power supply terminals.
  • Heat Management: Ensure proper thermal design for optimal performance and reliability.

Frequently Asked Questions

Q: What is the maximum voltage rating of the NVMFD5C650NLWFT1G?
A: The NVMFD5C650NLWFT1G has a voltage rating of 650V, making it suitable for high-voltage applications.

Q: Does the NVMFD5C650NLWFT1G require additional heat sinking?
A: Depending on the application and power dissipation, proper heat sinking may be necessary to ensure the MOSFET operates within temperature limits.

Equivalent

For similar functionalities, consider these alternatives to the NVMFD5C650NLWFT1G:

  • IXFN140N10: A high-voltage N-channel Power MOSFET with comparable specifications for power electronic applications.
  • STP80NF70: This MOSFET from STMicroelectronics offers similar performance characteristics and voltage ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL Dual / DFN-8 Case Outline 506BT
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Dual V(BR)DSS Min (V) 60
VGS Max (V) ±20 VGS(th) Max (V) 2.2
ID Max (A) 125 PD Max (W) 125
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1: 5.8, Q2: 5.8 RDS(on) Max @ VGS = 10 V (mΩ) Q1: 4.2, Q2: 4.2
Qg Typ @ VGS = 4.5 V (nC) 4.7 Qg Typ @ VGS = 10 V (nC) 37
Ciss Typ (pF) 2546 Pricing ($/Unit) $2.0578

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NVMFD5C650NLWFT1G

Power MOSFET featuring two N-Channel transistors, each rated for 60V, 111A, and 4.2mΩ resistance

Inventory:

8,032