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NUP4302MR6T1G

Compact TSOP Package: Housed in a 6-pin Thin Small Outline Package (TSOP)

Inventory:7,814

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Overview of NUP4302MR6T1G

The NUP4302MR6T1G is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT-23 package. It is designed for use in power management and load-switching applications where low on-resistance, fast switching performance, and small form factor are essential.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NUP4302MR6T1G FET for a visual representation.

Key Features

  • Dual N-Channel FET: Provides two independent N-channel FETs in a single package for enhanced versatility.
  • Low On-Resistance: The FET offers low on-resistance (RDS(ON)) for efficient power management.
  • Fast Switching: Delivers fast switching performance, minimizing power loss and maximizing efficiency.
  • Small Package: Housed in a compact SOT-23 package, suitable for space-constrained applications.
  • Low Gate Threshold Voltage: Operates effectively with low gate drive voltages, enhancing compatibility with control circuits.

Note: For detailed technical specifications, please refer to the NUP4302MR6T1G datasheet.

Application

  • Power Management: Ideal for power distribution and management in portable electronic devices, battery-powered systems, and more.
  • Load Switching: Suitable for load-switching applications such as disconnect switches and power routing circuits.
  • DC-DC Conversion: Can be used in DC-DC converter and voltage regulation circuits to control power flow.

Functionality

The NUP4302MR6T1G is a dual N-channel FET designed for efficient power management and fast switching operations. It provides low on-resistance and compact form factor, making it suitable for various power control applications.

Usage Guide

  • Connection: Connect the Gate (G) pin to the control signal, Drain (D) to the load, and Source (S) to the ground or return path.
  • Drive Voltage: Ensure that the gate drive voltage meets the FET's threshold voltage for proper switching behavior.

Frequently Asked Questions

Q: What is the typical on-resistance of the NUP4302MR6T1G?
A: The typical on-resistance (RDS(ON)) of the NUP4302MR6T1G is specified in the datasheet. It can vary based on operating conditions and configurations.

Q: Can the NUP4302MR6T1G be used in battery-powered devices?
A: Yes, the FET's low on-resistance and efficient switching make it suitable for battery-powered applications where power management is critical.

Equivalent

For similar functionalities, consider these alternatives to the NUP4302MR6T1G:

  • NTTS4D603PG: A dual N-channel FET from ON Semiconductor with comparable features and performance for power management applications.
  • DMG2302UK-7: This is a dual N-channel FET from Diodes Incorporated, offering similar characteristics and functionality for power control and load-switching tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type TSOP-6 Case Outline 318G-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Interface USB 2.0
Number of Lines 4 Direction Bidirectional
C Max (pF) 28 V(BR) Min (V) 30
VRWM Max (V) 25 IR Max (µA) 30
PPK Max (W) 0.225 Pricing ($/Unit) $0.4741Sample

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packageimg

NUP4302MR6T1G

Compact TSOP Package: Housed in a 6-pin Thin Small Outline Package (TSOP)

Inventory:

7,814