• NUP4202W1T2G SC-88-6
NUP4202W1T2G SC-88-6


202W1T2G surge protector offers protection from ESD, EFT, and lightning for high-speed data lines

Quantity Unit Price(USD) Ext. Price
5 $0.089 $0.44
50 $0.072 $3.60
150 $0.065 $9.75
500 $0.059 $29.50
3000 $0.046 $138.00
6000 $0.044 $264.00


*The price is for reference only.
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Overview of NUP4202W1T2G

The NUP4202W1T2G is a dual P-Channel Surface Mount Enhancement Mode Field Effect Transistor with low on-state resistance and high conductance. This MOSFET is designed for use in power management applications where efficiency and space-saving are crucial factors.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate for MOSFET 1
  • SOURCE1: Source for MOSFET 1
  • DRAIN1: Drain for MOSFET 1
  • GATE2: Gate for MOSFET 2
  • SOURCE2: Source for MOSFET 2
  • DRAIN2: Drain for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NUP4202W1T2G MOSFET for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Provides two P-Channel MOSFETs in a single package for enhanced power management capabilities.
  • Low On-State Resistance: The NUP4202W1T2G offers low on-state resistance for minimal power dissipation.
  • Enhancement Mode: Operates in enhancement mode, allowing for easy control of the MOSFETs.
  • High Conductance: Ensures efficient current conduction for effective power handling.
  • Surface Mount Package: Comes in a surface mount package for easy and compact integration into PCB designs.

Note: For detailed technical specifications, please refer to the NUP4202W1T2G datasheet.


  • Power Management Systems: Ideal for use in power management systems requiring high efficiency and space-saving solutions.
  • Battery Protection Circuits: Suitable for battery protection circuits where low on-state resistance is essential for minimizing power loss.
  • Switching Circuits: Used in switching circuits for controlling power flow in various electronic applications.


The NUP4202W1T2G is a dual P-Channel MOSFET designed to offer efficient power management capabilities with its low on-state resistance and high conductance. It provides reliable performance in controlling power in a variety of applications.

Usage Guide

  • Gate Connection: Connect the GATE1 and GATE2 pins to the corresponding control signals for each MOSFET.
  • Source/Drain Connections: Connect the SOURCE1/DRAIN1 and SOURCE2/DRAIN2 pins as required for the circuit configuration.

Frequently Asked Questions

Q: What is the typical operating voltage range for the NUP4202W1T2G?
A: The NUP4202W1T2G can typically operate within a voltage range of -20V to -3.7V.

Q: Is the NUP4202W1T2G suitable for high-frequency switching applications?
A: Yes, the NUP4202W1T2G can be used in high-frequency switching applications due to its enhancement mode operation.


For similar functionalities, consider these alternatives to the NUP4202W1T2G:

  • NCP5901: This P-Channel MOSFET offers similar performance characteristics to the NUP4202W1T2G in a different package form factor.
  • AO3400: A dual P-Channel MOSFET with comparable specifications to the NUP4202W1T2G for power management applications.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Interface USB 2.0
Number of Lines 4 Direction Bidirectional
C Max (pF) 3 V(BR) Min (V) 6
VRWM Max (V) 5 IR Max (µA) 5
PPK Max (W) 500 Pricing ($/Unit) $0.3492Sample

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