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NTR3A052PZT1G

Transistor MOSFET P-Channel with 20V and 3.3A in SOT-23 Package

Quantity Unit Price(USD) Ext. Price
1 $0.360 $0.36
10 $0.271 $2.71
30 $0.235 $7.05
100 $0.187 $18.70
500 $0.166 $83.00
1000 $0.152 $152.00

Inventory:8,582

*The price is for reference only.
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Overview of NTR3A052PZT1G

NTR3A052PZT1G is a Small Signal Field-Effect Transistor optimized for low RDS(on) and low voltage gate drive operations. It provides excellent performance for power load switching applications.

Pinout

The NTR3A052PZT1G pinout refers to the configuration and function of each pin in its SOT-23 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the NTR3A052PZT1G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Leading −20 V Trench for Low RDS(on): This feature enables low on-resistance, making it suitable for high-frequency applications.
  • −1.8 V Rated for Low Voltage Gate Drive: The NTR3A052PZT1G can operate with a gate drive voltage as low as −1.8V, reducing the need for additional components and increasing system reliability.
  • RoHS Compliant: This product meets the RoHS (Restriction of Hazardous Substances) directive, ensuring it is environmentally friendly and safe to use in various applications.
  • P Channel SOT-23 MOSFETs: The NTR3A052PZT1G features P-channel MOSFETs in a compact SOT-23 package, making it suitable for space-constrained designs.
  • 20V 3.6A 47mΩ@3.5A,4.5V 860mW 1V@250uA: The NTR3A052PZT1G has a maximum voltage rating of 20V and can handle up to 3.6A of current while maintaining a low on-resistance of 47mΩ at 3.5A.

Applications

  • Power Load Switch: The NTR3A052PZT1G is suitable for power load switching applications where high-frequency and low-voltage gate drive operations are required.

Advantages and Disadvantages

Advantages

  • Low RDS(on) for High-Frequency Applications: The NTR3A052PZT1G's low on-resistance enables high-frequency operation, making it suitable for applications such as power supplies and motor control.
  • Low Voltage Gate Drive: The device can operate with a gate drive voltage as low as −1.8V, reducing the need for additional components and increasing system reliability.

Disadvantages

  • Limited Operating Temperature Range: The NTR3A052PZT1G has a limited operating temperature range of −40°C to 150°C, which may affect its performance in extreme environments.

Equivalents

For similar functionalities, consider these alternatives to the NTR3A052PZT1G:

  • NTR3A052PZT2G: This device offers similar performance and features but with a slightly different package type.

Frequently Asked Questions

Q: What is the maximum voltage rating of the NTR3A052PZT1G?
A: The maximum voltage rating of the NTR3A052PZT1G is 20V.

Q: Can the NTR3A052PZT1G handle high-frequency operations?
A: Yes, the device's low on-resistance enables high-frequency operation, making it suitable for applications such as power supplies and motor control.

Q: What is the operating temperature range of the NTR3A052PZT1G?
A: The operating temperature range of the NTR3A052PZT1G is −40°C to 150°C.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 3.6 A
Rds On - Drain-Source Resistance 47 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 11.9 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 860 mW Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 42 ns Forward Transconductance - Min 16 S
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 8 ns Unit Weight 0.000282 oz

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NTR3A052PZT1G

Transistor MOSFET P-Channel with 20V and 3.3A in SOT-23 Package

Inventory:

8,582