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NTMFS5C612NLT1G

NTMFS5C612NLT1G: This product is a MOSFET featuring N-type channel design

Quantity Unit Price(USD) Ext. Price
1 $1.311 $1.31
10 $1.096 $10.96
30 $0.978 $29.34
100 $0.845 $84.50
500 $0.785 $392.50
1500 $0.759 $1,138.50

Inventory:5,243

*The price is for reference only.
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Overview of NTMFS5C612NLT1G

The NTMFS5C612NLT1G is a high-performance Power MOSFET featuring low on-state resistance and fast switching performance. It is designed to handle high current and power levels, making it suitable for various power management applications in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the NTMFS5C612NLT1G for a visual representation.

Key Features

  • Low On-State Resistance: The NTMFS5C612NLT1G offers low RDS(ON), resulting in reduced conduction losses and improved efficiency.
  • High Current Handling: With its high current carrying capability, this MOSFET is suitable for power applications requiring high load currents.
  • Fast Switching Speed: It features fast switching characteristics, allowing for rapid control of power flow in electronic circuits.
  • Robust Construction: The NTMFS5C612NLT1G is designed to operate reliably under high-power conditions, ensuring long-term stability.

Note: For detailed technical specifications, please refer to the NTMFS5C612NLT1G datasheet.

Application

  • Power Supply Circuits: Ideal for use in power supply circuits to regulate and control power flow.
  • Motor Control: Suitable for motor control applications requiring high current handling and efficient switching.
  • Voltage Regulation: Used in voltage regulator circuits to manage and stabilize output voltages.

Functionality

The NTMFS5C612NLT1G is a high-performance Power MOSFET designed for efficient power management and control in electronic circuits. It offers low on-state resistance and high current handling capabilities, making it ideal for various power applications.

Usage Guide

  • G: Connect the gate terminal to the control signal for switching the MOSFET.
  • S: Connect the source terminal to the ground or common reference point in the circuit.
  • D: Connect the drain terminal to the load or power input for controlling current flow.

Frequently Asked Questions

Q: Is the NTMFS5C612NLT1G suitable for high-frequency switching applications?
A: Yes, the NTMFS5C612NLT1G offers fast switching speed, making it suitable for high-frequency switching requirements in electronic circuits.

Equivalent

For similar functionalities, consider these alternatives to the NTMFS5C612NLT1G:

  • IRF520N: This Power MOSFET offers similar performance characteristics and high current handling capabilities.
  • SiHP065N60E: A high-power MOSFET with low on-state resistance and fast switching speed, suitable for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 60
VGS Max (V) ±20 VGS(th) Max (V) 2
ID Max (A) 226 PD Max (W) 167
RDS(on) Max @ VGS = 4.5 V (mΩ) 2.3 RDS(on) Max @ VGS = 10 V (mΩ) 1.5
Qg Typ @ VGS = 4.5 V (nC) 22 Qg Typ @ VGS = 10 V (nC) 91
Ciss Typ (pF) 6660 Pricing ($/Unit) $2.7019

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NTMFS5C612NLT1G

NTMFS5C612NLT1G: This product is a MOSFET featuring N-type channel design

Inventory:

5,243