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NTMFS4C06NT1G

NTMFS4C06N - Power-efficient semiconductor device for amplifying electronic signals

Inventory:5,030

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Overview of NTMFS4C06NT1G

The NTMFS4C06NT1G is a high-performance Power MOSFET designed for use in power management applications. It features a low on-state resistance and fast switching speed, making it ideal for high-efficiency power conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTMFS4C06NT1G MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The NTMFS4C06NT1G offers a low RDS(on) for efficient power delivery.
  • Fast Switching Speed: This MOSFET has a quick switching response, suitable for high-frequency applications.
  • High Power Dissipation: With its high power dissipation capability, the NTMFS4C06NT1G can handle high power levels.
  • Enhanced Thermal Performance: Designed for improved thermal management to ensure reliable operation under varying conditions.

Note: For detailed technical specifications, please refer to the NTMFS4C06NT1G datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices.
  • Synchronous Buck Converters: Suitable for use in synchronous buck converter applications to regulate voltage efficiently.
  • Motor Control: Can be utilized in motor control systems for high-power switching applications.

Functionality

The NTMFS4C06NT1G MOSFET is designed to provide efficient power switching and control capabilities in power management and voltage regulation applications.

Usage Guide

  • Gate Control: Apply proper voltage levels to the Gate pin for controlling the switching state of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking or thermal management to maintain optimal performance and reliability.

Frequently Asked Questions

Q: Is the NTMFS4C06NT1G compatible with high-frequency applications?
A: Yes, the NTMFS4C06NT1G features a fast switching speed, making it suitable for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the NTMFS4C06NT1G:

  • NTMFS4C10NT1G: Another high-performance Power MOSFET offering similar characteristics and performance.
  • NTMFS4C12NT1G: A Power MOSFET with comparable specifications to the NTMFS4C06NT1G for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 30
VGS Max (V) 20 VGS(th) Max (V) 2.1
ID Max (A) 69 PD Max (W) 30.5
RDS(on) Max @ VGS = 4.5 V (mΩ) 6 RDS(on) Max @ VGS = 10 V (mΩ) 4
Qg Typ @ VGS = 10 V (nC) 11.6 Ciss Typ (pF) 1683
Pricing ($/Unit) $0.4439

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NTMFS4C06NT1G

NTMFS4C06N - Power-efficient semiconductor device for amplifying electronic signals

Inventory:

5,030