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NTMD3P03R2G

Dual P−Channel SOIC−8 Power MOSFET capable of handling 3.05 Amps and operating at -30 Volts

Inventory:9,760

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Overview of NTMD3P03R2G

The NTMD3P03R2G is a P-channel power MOSFET designed for use in various electronic applications. This MOSFET is part of the ON Semiconductor family, offering high performance and reliability.

Technical Specifications

  • Model: NTMD3P03R2G
  • Type: P-Channel MOSFET
  • Voltage Rating: -30V
  • Current Rating: -3.6A
  • Package: DPAK
  • Manufacturer: ON Semiconductor

Key Features

  • High Voltage Rating: The NTMD3P03R2G has a voltage rating of -30V, suitable for various power applications.
  • Low On-Resistance: This MOSFET offers low on-resistance, resulting in minimal power loss and efficient operation.
  • DPAK Package: The DPAK package provides a compact and reliable housing for the MOSFET, ideal for space-constrained designs.
  • High Current Rating: With a current rating of -3.6A, the NTMD3P03R2G can handle substantial current loads effectively.

Application

  • Power Management: The NTMD3P03R2G is commonly used in power management circuits, voltage regulators, and other power-related applications.
  • Switching Circuits: This P-channel MOSFET can be utilized in switching circuits for controlling power flow and switching operations.
  • Motor Control: The NTMD3P03R2G is suitable for motor control applications, providing efficient power handling capabilities.

Additional Information

For further details on the NTMD3P03R2G, please refer to the ON Semiconductor datasheet for comprehensive technical specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOIC-8 Case Outline 751-07
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target Y Channel Polarity P-Channel
Configuration Dual V(BR)DSS Min (V) -30
VGS Max (V) 20 VGS(th) Max (V) -3
ID Max (A) -3.05 PD Max (W) 0.73
RDS(on) Max @ VGS = 4.5 V (mΩ) Q1=Q2=125 RDS(on) Max @ VGS = 10 V (mΩ) Q1=Q2=85
Qg Typ @ VGS = 4.5 V (nC) 12 Qg Typ @ VGS = 10 V (nC) 16
Ciss Typ (pF) 520 Pricing ($/Unit) $0.4527

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NTMD3P03R2G

Dual P−Channel SOIC−8 Power MOSFET capable of handling 3.05 Amps and operating at -30 Volts

Inventory:

9,760