• NTJD4105CT1G SC88-6
NTJD4105CT1G SC88-6

NTJD4105CT1G

SOT-363-6 MOSFETs ROHS

Quantity Unit Price(USD) Ext. Price
5 $0.207 $1.04
50 $0.164 $8.20
150 $0.140 $21.00
500 $0.126 $63.00
3000 $0.114 $342.00
6000 $0.107 $642.00

Inventory:7,637

*The price is for reference only.
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Overview of NTJD4105CT1G

The NTJD4105CT1G is a dual N-channel power MOSFET designed for high current switching applications.This MOSFET features low on-resistance and fast switching characteristics,making it suitable for power management in various electronic devices.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Source 1(S1):Source terminal for MOSFET 1
  • Gate 1(G1):Gate terminal for MOSFET 1
  • Drain 1(D1):Drain terminal for MOSFET 1
  • Source 2(S2):Source terminal for MOSFET 2
  • Gate 2(G2):Gate terminal for MOSFET 2
  • Drain 2(D2):Drain terminal for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTJD4105CT1G MOSFET for a visual representation.

Key Features

  • Dual N-Channel MOSFETs:The NTJD4105CT1G includes two N-channel MOSFETs for efficient power switching.
  • Low On-Resistance:This MOSFET offers low on-resistance for minimal power loss during operation.
  • Fast Switching Speed:With its fast switching characteristics,this MOSFET is suitable for high-speed power control applications.
  • High Current Capability:The NTJD4105CT1G can handle high current levels,ideal for power management in demanding circuits.
  • Compact Package:Available in a compact and space-saving package for easy integration into electronic designs.

Note:For detailed technical specifications,please refer to the NTJD4105CT1G datasheet.

Application

  • Power Management Systems:Ideal for use in power management systems requiring efficient current control.
  • Motor Control:Suitable for motor control applications where fast switching of high currents is essential.
  • Power Supplies:Can be used in power supply units to regulate and control output voltages.

Functionality

The NTJD4105CT1G MOSFET features dual N-channel power transistors that enable effective power switching and control.Its low on-resistance and high current capability make it a reliable choice for diverse power management applications.

Usage Guide

  • Connection:Connect the source, gate, and drain pins of each MOSFET to the respective circuit elements as per the application requirements.
  • Drive Voltage:Apply the appropriate gate-source voltage to switch the MOSFETs ON and OFF effectively.
  • Current Handling:Ensure that the MOSFET can handle the maximum current levels encountered in the application for reliable performance.

Frequently Asked Questions

Q:What is the maximum current rating of the NTJD4105CT1G?
A:The NTJD4105CT1G can handle high current levels, typically up to X amperes.

Q:Is the NTJD4105CT1G suitable for PWM applications?
A:Yes, the NTJD4105CT1G's fast switching speed makes it suitable for Pulse Width Modulation (PWM) applications where rapid power control is required.

Equivalent

For similar functionalities, consider these alternatives to the NTJD4105CT1G:

  • NTJD4105CT1: This is a single N-channel power MOSFET with comparable specifications to the NTJD4105CT1G for applications requiring a single switching element.
  • NTJD5101CT1G: A dual P-channel power MOSFET offering similar performance characteristics but with P-channel transistor configuration.

NTJD4105CT1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity Complementary
Configuration Dual V(BR)DSS Min (V) 0
VGS Max (V) 12 VGS(th) Max (V) 1.5
ID Max (A) 0.63 PD Max (W) 0.27
RDS(on) Max @ VGS = 2.5 V (mΩ) N:445.0 , P:460.0 RDS(on) Max @ VGS = 4.5 V (mΩ) N: 375.0, P: 300
Qg Typ @ VGS = 4.5 V (nC) 0.9 Qg Typ @ VGS = 10 V (nC) 1.3
Ciss Typ (pF) N(20V):33, P(-8V): 160 Pricing ($/Unit) $0.102Sample

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