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NTHD3100CT1G

Complementary MOSFET with 20V voltage rating and +3.9A/-4.4A current handling

Inventory:7,211

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Overview of NTHD3100CT1G

The NTHD3100CT1G is a high-voltage transistor designed for use in various switching and amplification applications. This NPN Darlington transistor features a collector-emitter voltage of 60V and a continuous collector current of 1A, making it suitable for medium-power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTHD3100CT1G transistor for a visual representation.

Key Features

  • High-Voltage Transistor: The NTHD3100CT1G can handle collector-emitter voltages of up to 60V, suitable for various high-power applications.
  • Darlington Configuration: This transistor is configured in a Darlington pair, offering high current gain and low saturation voltage.
  • Medium Power: With a continuous collector current rating of 1A, this transistor is ideal for medium-power circuits.
  • High Gain: The Darlington configuration provides high current gain, making it suitable for driving loads with higher power requirements.

Note: For detailed technical specifications, please refer to the NTHD3100CT1G datasheet.

Application

  • Switching Circuits: The NTHD3100CT1G is commonly used in switching circuits where high current gain and voltage handling capabilities are required.
  • Amplification: This transistor can be utilized for amplification purposes in audio and signal processing applications.
  • Power Drivers: Suitable for use as a power driver in various electronic devices and equipment.

Functionality

The NTHD3100CT1G transistor, with its Darlington configuration, provides high current gain and voltage handling capabilities, making it versatile for switching and amplification tasks in electronic circuits.

Usage Guide

  • Connection: Connect the emitter(E), base(B), and collector(C) pins according to the circuit requirements.
  • Driving Loads: Use the NTHD3100CT1G to drive loads requiring higher current and voltage levels efficiently.
  • Biasing: Ensure proper biasing of the base pin to control the transistor's operation effectively.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage rating of the NTHD3100CT1G?
A: The NTHD3100CT1G can handle a maximum collector-emitter voltage of 60V.

Q: Can the NTHD3100CT1G be used in audio amplifier circuits?
A: Yes, the NTHD3100CT1G is suitable for audio amplifier applications due to its high current gain and medium-power capabilities.

Equivalent

For similar functionalities, consider these alternatives to the NTHD3100CT1G:

  • MMBT2222ALT1G: This is a general-purpose NPN transistor suitable for low-power applications with similar characteristics to the NTHD3100CT1G.
  • BC547B: A versatile NPN transistor commonly used in switching and amplification circuits, providing comparable performance to the NTHD3100CT1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type ChipFET-8 Case Outline 1206A-03
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Channel Polarity Complementary
Configuration Dual V(BR)DSS Min (V) ±20
VGS Max (V) 12 VGS(th) Max (V) 1.5
ID Max (A) 2.9 PD Max (W) 1.1
RDS(on) Max @ VGS = 2.5 V (mΩ) N:77.0, P: 85.0 RDS(on) Max @ VGS = 4.5 V (mΩ) N:85, P: 64
Qg Typ @ VGS = 4.5 V (nC) 7.9 Qg Typ @ VGS = 10 V (nC) 7.4
Ciss Typ (pF) N: 165, P: 680 Pricing ($/Unit) $0.3973Sample

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NTHD3100CT1G

Complementary MOSFET with 20V voltage rating and +3.9A/-4.4A current handling

Inventory:

7,211