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NTHC5513T1G

NTHC5513T1G: MOSFET Transistor, Dual N/P-Channel, 20V Vds, 2.9A/2.2A Id, 8-Pin Chip Package, Tape and Reel."

Quantity Unit Price(USD) Ext. Price
1000 $0.351 $351.00
500 $0.366 $183.00
100 $0.398 $39.80
30 $0.449 $13.47
10 $0.502 $5.02
1 $0.606 $0.61

Inventory:5,157

*The price is for reference only.
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Overview of NTHC5513T1G

The NTHC5513T1G is a high-speed, ultra-low capacitance TVS diode designed to protect sensitive electronics from voltage transients induced by lightning, ESD, and other transient voltage events. This TVS diode offers robust ESD protection and helps to safeguard electronic circuits in a variety of applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • 1 - Anode
  • 2 - Cathode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTHC5513T1G TVS diode for a visual representation.

Key Features

  • Ultra-Low Capacitance: The NTHC5513T1G features ultra-low capacitance, minimizing signal distortion and ensuring high-speed transmission integrity.
  • High ESD Protection Level: This TVS diode provides high ESD protection to prevent damage to electronic components during ESD events.
  • Low Clamping Voltage: With a low clamping voltage, the NTHC5513T1G limits the voltage excursion during transient events, protecting downstream components.
  • Compact Package: Available in a compact and space-saving package, making it suitable for densely populated PCB designs.
  • RoHS Compliant: The NTHC5513T1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Note: For detailed technical specifications, please refer to the NTHC5513T1G datasheet.

Application

  • Telecommunication Systems: Ideal for protecting telecommunication equipment from voltage transients induced by lightning and other transient events.
  • Industrial Automation: Suitable for safeguarding sensitive electronic components in industrial automation systems from ESD and transient voltage events.
  • Consumer Electronics: Used in consumer electronic devices such as smartphones, tablets, and laptops to prevent damage from ESD events.

Functionality

The NTHC5513T1G TVS diode provides ultra-low capacitance and high ESD protection, effectively safeguarding electronic circuits from transient voltage events and ensuring reliable performance in various applications.

Usage Guide

  • Placement: Connect the anode and cathode of the NTHC5513T1G across the signal or power lines to be protected from transient voltage events.
  • Grounding: Ensure proper grounding of the TVS diode for effective transient voltage suppression.

Frequently Asked Questions

Q: Is the NTHC5513T1G suitable for high-speed data lines?
A: Yes, the ultra-low capacitance of the NTHC5513T1G makes it well-suited for high-speed data lines and high-frequency signal protection.

Equivalent

For similar functionalities, consider these alternatives to the NTHC5513T1G:

  • PUSB3BF4TV4: This TVS diode offers similar ultra-low capacitance and high ESD protection for safeguarding sensitive electronics in high-speed applications.
  • SMF05C: A compact TVS diode with ultra-low capacitance, designed for protecting high-speed communication ports and interfaces from transient events.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Lifetime Compliance PbAHP
Package Type ChipFET-8 Case Outline 1206A-03
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity Complementary
Configuration Dual V(BR)DSS Min (V) ±20
VGS Max (V) 12 VGS(th) Max (V) 1.2
ID Max (A) 2.9 PD Max (W) 1.1
RDS(on) Max @ VGS = 2.5 V (mΩ) N:80.0, P: 200.0 RDS(on) Max @ VGS = 4.5 V (mΩ) N:60.0, P: 130.0
Qg Typ @ VGS = 4.5 V (nC) 2.3 Qg Typ @ VGS = 10 V (nC) 6
Ciss Typ (pF) N: 180, P: 185 Pricing ($/Unit) $0.5069Sample

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

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NTHC5513T1G

NTHC5513T1G: MOSFET Transistor, Dual N/P-Channel, 20V Vds, 2.9A/2.2A Id, 8-Pin Chip Package, Tape and Reel."

Inventory:

5,157