• NTD5865NLT4G Package
NTD5865NLT4G Package

NTD5865NLT4G

In Stock:5,748

NTD5865NLT4G is a high-quality Single FETs, MOSFETs from Onsemi

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Quantity Unit Price(USD) Ext. Price
1 $0.946 $0.95
10 $0.780 $7.80
30 $0.697 $20.91
100 $0.614 $61.40
500 $0.514 $257.00
1000 $0.489 $489.00
*The price is for reference only.
NTD5865NLT4G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type DPAK-3 Case Outline 369AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 60
VGS Max (V) 20 VGS(th) Max (V) 2
ID Max (A) 40 PD Max (W) 71
RDS(on) Max @ VGS = 4.5 V (mΩ) 19 RDS(on) Max @ VGS = 10 V (mΩ) 16
Qg Typ @ VGS = 10 V (nC) 29 Ciss Typ (pF) 1400
Pricing ($/Unit) Price N/A

Overview of NTD5865NLT4G

The NTD5865NLT4G is a N-channel Power MOSFET designed for high-power switching applications. This MOSFET features a low on-resistance and high current-handling capability, making it ideal for use in power supply, motor control, and automotive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NTD5865NLT4G MOSFET for a visual representation.

Key Features

  • High Power Handling: The NTD5865NLT4G is capable of handling high currents and power levels, suitable for demanding applications.
  • Low On-Resistance: This Power MOSFET offers low on-resistance, minimizing power losses and improving efficiency.
  • Fast Switching Speed: With its fast switching characteristics, this MOSFET enables rapid switching transitions in power circuits.
  • Robust Design: Designed for reliability and durability, the NTD5865NLT4G can withstand high temperatures and voltage levels.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in various power applications.

Note: For detailed technical specifications, please refer to the NTD5865NLT4G datasheet.

Application

  • Power Supplies: Suitable for use in power supply circuits due to its high current-handling capability.
  • Motor Control: Ideal for motor control applications in automotive and industrial systems.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power efficiently.

Functionality

The NTD5865NLT4G Power MOSFET is designed for efficient power handling, enabling high-power switching operations in various electronic devices and systems.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the gate driver circuit for controlling the MOSFET.
  • Drain and Source Connections: The drain pin (D) and source pin (S) should be connected in the circuit based on the application requirements.

Frequently Asked Questions

Q: Is the NTD5865NLT4G suitable for automotive applications?
A: Yes, the NTD5865NLT4G is suitable for automotive applications requiring high-power switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the NTD5865NLT4G:

  • IRF540N: A comparable N-channel Power MOSFET with similar power handling capabilities.
  • FDP8870: This Power MOSFET provides high current-handling and low on-resistance for power applications.

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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NTD5865NLT4G Package

NTD5865NLT4G

NTD5865NLT4G N-channel MOSFET Transistor

Inventory:

5,748