NT5CC256M8IN-DI

The NT5CC256M8IN-DI is a 256Mb DDR3 SDRAM memory module designed for high-speed data storage and retrieval applications. It offers a high data transfer rate and low power consumption, making it suitable for various computing and embedded systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• VDD: Power Supply
• CKE: Clock Enable
• A0-A13: Address Inputs
• DQ0-DQ63: Data Inputs/Outputs
• CS: Chip Select
• WE: Write Enable
• RAS: Row Address Strobe
• CAS: Column Address Strobe
• DM: Data Mask
• RD: Read Enable
• CLK: Clock Input
• BA0-BA2: Bank Address Inputs
• DQS/DQSN: Data Strobe/Inverted Data Strobe
• DM: Data Mask

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NT5CC256M8IN-DI memory module for a visual representation.

Key Features

• High-Speed Data Transfer: Supports high data transfer rates, suitable for demanding applications.
• Low Power Consumption: Operates with low power requirements, ideal for energy-efficient systems.
• Large Capacity: Offers 256Mb of storage capacity for storing a significant amount of data.
• Wide Compatibility: Compatible with various computing and embedded systems that require DDR3 SDRAM.
• Reliable Performance: Provides reliable performance for data storage and retrieval tasks.

Note: For detailed technical specifications, please refer to the NT5CC256M8IN-DI datasheet.

Application

• Computer Systems: Suitable for use in desktops, laptops, servers, and other computing devices.
• Embedded Systems: Ideal for embedded applications requiring high-speed memory access.
• Networking Equipment: Used in networking devices for data buffering and processing.

Functionality

The NT5CC256M8IN-DI DDR3 SDRAM memory module provides fast and efficient data storage and retrieval capabilities, catering to the needs of computing and embedded systems.

Usage Guide

• Power Supply: Connect VDD (Pin 1) to the power supply voltage.
• Data Connections: Utilize the address inputs (A0-A13) and data inputs/outputs (DQ0-DQ63) for data transfer.
• Control Signals: Configure the control inputs (CS, WE, RAS, CAS, DM, RD, CLK, BA0-BA2, DQS/DQSN) for memory operation.

Frequently Asked Questions

Q: What is the operating voltage range of the NT5CC256M8IN-DI?
A: The NT5CC256M8IN-DI operates within a voltage range specified in the datasheet, typically around 1.35V to 1.5V.

Q: Is the NT5CC256M8IN-DI compatible with DDR2 systems?
A: No, the NT5CC256M8IN-DI is designed for DDR3 SDRAM systems and may not be compatible with DDR2 interfaces.