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NSS12201LT1G

12V NPN transistor capable of handling 4.0A of current

Inventory:6,305

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Overview of NSS12201LT1G

The NSS12201LT1G is a low ON-resistance single N-channel enhancement mode Field-Effect Transistor (FET) designed for low voltage, high-speed switching applications such as power management and load switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input for controlling the switching action
  • Drain (D): Output terminal for the FET
  • Source (S): Ground connection
  • Bulk (B): Connection for substrate or bulk of the FET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NSS12201LT1G FET for a visual representation.

Key Features

  • Low ON-Resistance: Provides efficient current conduction with minimal voltage drop.
  • High-Speed Switching: Suitable for high-frequency switching applications.
  • Enhancement Mode: Operates as an enhancement mode FET, allowing control of the output signal with ease.
  • Low Voltage Operation: Designed for optimal performance at low voltage levels.
  • Surface Mount Package: Available in a compact surface mount package for easy PCB integration.

Note: For detailed technical specifications, please refer to the NSS12201LT1G datasheet.

Application

  • Power Management: Ideal for power distribution and voltage regulation in electronic systems.
  • Load Switching: Suitable for controlling the on/off state of loads in various circuits.
  • DC-DC Converters: Used in DC-DC converter circuits for efficient power conversion.

Functionality

The NSS12201LT1G is a low ON-resistance single N-channel enhancement mode FET designed for efficient and high-speed switching applications, providing reliable power management and load control.

Usage Guide

  • Gate Control: Apply the control signal to the Gate (G) pin to modulate the FET's conduction.
  • Load Connection: Connect the load to the Drain (D) and Source (S) terminals as per the circuit requirements.
  • Bulk Connection: The Bulk (B) pin should be connected to the substrate or bulk connection as specified in the datasheet.

Frequently Asked Questions

Q: What is the typical ON-resistance of NSS12201LT1G?
A: The NSS12201LT1G typically exhibits low ON-resistance, enabling efficient current conduction.

Q: Is the NSS12201LT1G suitable for high-frequency switching?
A: Yes, the NSS12201LT1G is designed for high-speed switching applications, making it suitable for high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the NSS12201LT1G:

  • NVMFS5C404N: This is a similar N-channel FET with low ON-resistance and high-speed switching capabilities.
  • NTD5867NL: An alternative N-channel FET suitable for power management and load switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target Y Polarity NPN
Type Low VCE(sat) VCE(sat) Max (V) 0.05
IC Cont. (A) 2 VCEO Min (V) 12
VCBO (V) 12 VEBO (V) 6
VBE(sat) (V) 0.9 VBE(on) (V) 0.9
hFE Min 200 fT Min (MHz) 150
PTM Max (W) 0.54 Pricing ($/Unit) $0.1051Sample

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NSS12201LT1G

12V NPN transistor capable of handling 4.0A of current

Inventory:

6,305