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NJVMJD44H11T4G

Bipolar Transistors - BJT SILICON Pwr TRANSISTOR

Quantity Unit Price(USD) Ext. Price
1 $0.579 $0.58
10 $0.496 $4.96
30 $0.455 $13.65
100 $0.414 $41.40
500 $0.378 $189.00
1000 $0.366 $366.00

Inventory:5,055

*The price is for reference only.
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Submit your quote request for NJVMJD44H11T4G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of NJVMJD44H11T4G

NJVMJD44H11T4G is a Bipolar Junction Transistor (BJT) optimized for efficient power management, low noise operation, and high reliability performance. It provides excellent performance for automotive applications that require analog and digital signal switching.

Pinout

The NJVMJD44H11T4G pinout refers to the configuration and function of each pin in its DPAK package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the NJVMJD44H11T4G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Efficient Power Management: NJVMJD44H11T4G is designed for efficient power management, reducing energy consumption and heat generation.
  • Low Noise Operation: This BJT transistor operates with low noise levels, ensuring minimal interference in sensitive applications.
  • High Reliability Performance: NJVMJD44H11T4G is built for high reliability performance, making it suitable for demanding automotive applications.
  • Suitable for Automotive Use: This BJT transistor meets the requirements of automotive applications, including temperature and vibration resistance.
  • Reduced EMI Emissions: NJVMJD44H11T4G is designed to reduce electromagnetic interference (EMI) emissions, ensuring minimal impact on surrounding systems.
  • Improved Thermal Performance: This BJT transistor features improved thermal performance, allowing for efficient heat dissipation and reduced risk of overheating.
  • Enhanced Power Density: NJVMJD44H11T4G offers enhanced power density, enabling higher power handling while maintaining compact design.
  • Automatic Overload Protection: This BJT transistor features automatic overload protection, ensuring safe operation and preventing damage from excessive current draw.
  • High Efficiency Conversion: NJVMJD44H11T4G is designed for high efficiency conversion, minimizing energy losses and heat generation.
  • Low Current Consumption: This BJT transistor operates with low current consumption, reducing power consumption and prolonging battery life.
  • Compact Design Flexibility: NJVMJD44H11T4G offers compact design flexibility, allowing for easy integration into a wide range of applications.
  • Simple Circuit Configuration: This BJT transistor features simple circuit configuration, making it easy to integrate and troubleshoot.
  • Complementary Pairs Available: NJVMJD44H11T4G is available in complementary pairs for improved performance and reliability.
  • Surface Mount Compatible: This BJT transistor is compatible with surface mount technology, simplifying assembly and reducing space requirements.
  • AEC-Q101 Qualified: NJVMJD44H11T4G meets the AEC-Q101 qualification standard for automotive applications, ensuring reliability and performance in harsh environments.
  • Pb-Free and RoHS Compliant: This BJT transistor is lead-free (Pb-free) and compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally friendly designs.
  • Fast Switching Times: NJVMJD44H11T4G features fast switching times, enabling high-speed operation and minimizing signal distortion.
  • High Current Handling: This BJT transistor is designed to handle high currents, making it suitable for demanding applications that require high power handling.
  • Low Saturation Voltage: NJVMJD44H11T4G features low saturation voltage, reducing energy losses and heat generation during operation.

Applications

NJVMJD44H11T4G is suitable for a wide range of applications, including:

  • Automotive systems: NJVMJD44H11T4G is designed to meet the demands of automotive applications, including temperature and vibration resistance.
  • Industrial control systems: This BJT transistor features high reliability performance, making it suitable for demanding industrial control systems.
  • Consumer electronics: NJVMJD44H11T4G offers compact design flexibility, making it suitable for a wide range of consumer electronics applications.

Advantages and Disadvantages

Advantages:

  • Efficient power management
  • Low noise operation
  • High reliability performance
  • Suitable for automotive use
  • Reduced EMI emissions
  • Improved thermal performance
  • Enhanced power density
  • Automatic overload protection

Disadvantages:

  • Higher cost compared to other BJT transistors
  • Limited availability in certain regions

Equivalents

NJVMJD44H11T4G is equivalent to other high-reliability BJT transistors, such as:

  • STMicroelectronics' STP14NF15L
  • Fairchild Semiconductor's FQP14N60C
  • Infineon Technologies' BSZ34-16D

Frequently Asked Questions

Q: What is the maximum current rating of NJVMJD44H11T4G?
A: The maximum current rating of NJVMJD44H11T4G is 15 A.

Q: Is NJVMJD44H11T4G suitable for high-frequency applications?
A: Yes, NJVMJD44H11T4G is designed to operate at high frequencies and features low saturation voltage for efficient energy conversion.

Q: Can NJVMJD44H11T4G be used in automotive applications that require high temperature resistance?
A: Yes, NJVMJD44H11T4G meets the requirements of automotive applications that require high temperature resistance and features improved thermal performance for efficient heat dissipation.

Q: Is NJVMJD44H11T4G compatible with surface mount technology?
A: Yes, NJVMJD44H11T4G is compatible with surface mount technology, simplifying assembly and reducing space requirements.

Q: What is the maximum voltage rating of NJVMJD44H11T4G?
A: The maximum voltage rating of NJVMJD44H11T4G is 60 V.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 8 A Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A, 1V Power - Max 1.75 W
Frequency - Transition 85MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package DPAK Base Product Number NJVMJD44

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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NJVMJD44H11T4G

Bipolar Transistors - BJT SILICON Pwr TRANSISTOR

Inventory:

5,055