NJV4030PT1G

The NJV4030PT1G is a P-Channel Power MOSFET with a maximum drain-source voltage of -30V and a continuous drain current of -3.7A. It is designed for use in low voltage applications where high efficiency and compact size are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• D: Drain
• G: Gate
• S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NJV4030PT1G MOSFET for a visual representation.

Key Features

• P-Channel Power MOSFET: Ideal for use in applications requiring P-Channel MOSFET functionality.
• Low Voltage Operation: Suitable for low voltage circuits with a maximum drain-source voltage of -30V.
• High Current Capability: The NJV4030PT1G can handle continuous drain currents of up to -3.7A.
• Compact Size: With a small form factor, this MOSFET is space-efficient for compact designs.
• Efficient Performance: Offers high efficiency in power management applications.

Note: For detailed technical specifications, please refer to the NJV4030PT1G datasheet.

Application

• Power Management: Suitable for power management applications where low voltage and high efficiency are crucial.
• Battery Protection: Can be used for battery protection circuits in portable electronic devices.
• Voltage Regulation: Ideal for applications requiring voltage regulation in low voltage systems.

Functionality

The NJV4030PT1G P-Channel MOSFET is designed to control the flow of power in low voltage circuits, providing efficient and reliable performance in various electronic applications.

Usage Guide

• Drain Connection: Connect the load to the Drain (D) pin.
• Gate Control: Apply the appropriate voltage level to the Gate (G) pin to control the MOSFET.
• Source Connection: Connect the source to the Source (S) pin for complete circuit operation.